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Datasheet 1N5711 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N5711 | SCHOTTKY RECTIFIERS 1N5711, 1N5712 & 1N6263
High-reliability discrete products and engineering services since 1977
SCHOTTKY RECTIFIERS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), sta |  Digitron Semiconductors | rectifier |
| 2 | 1N5711 | Schottky Barrier Diodes Schottky Barrier Diodes for General Purpose Applications
Technical Data
1N5711 1N5712 5082-2300 Series 5082-2800 Series 5082-2900
Features
• Low Turn-On Voltage As Low as 0.34 V at 1 mA
• Pico Second Switching Speed
• High Breakdown Voltage Up to 70 V
• Matched Characteristics Available
De |  Agilent | diode |
| 3 | 1N5711 | SCHOTTKY BARRIER DIODES 1N5711 and 1N6263
VRRM : 70V , 60V
FEATURES :
• For general purpose applications • Metal-on-silicon Schottky barrier device which is protected
by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling |  EIC | diode |
| 4 | 1N5711 | SMALL SIGNAL SCHOTTKY DIODES R
SEMICONDUCTOR
FEATURES
For general purpose applications Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast swit |  JINAN JINGHENG ELECTRONICS | diode |
| 5 | 1N5711 | Schottky Diodes VISHAY
Schottky Diodes
1N5711 / 1N6263
Vishay Semiconductors
Features
• For general purpose applications
• Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steer |  Vishay | diode |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
| 3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re  Unisonic Technologies mosfet | | |
| 4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
| 5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
| 7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
| Esta página es del resultado de búsqueda del 1N5711. Si pulsa el resultado de búsqueda de 1N5711 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
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