|
|
Número de pieza | IGP30N65H5 | |
Descripción | IGBT | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IGP30N65H5 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! IGBT
Highspeed5IGBTinTRENCHSTOPTM5technology
IGP30N65H5
650VIGBThighspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
1 page IGP30N65H5
Highspeedswitchingseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=520V,IC=30.0A,
VGE=15V
LE
min.
Value
typ.
max. Unit
- 1800 -
- 45 - pF
-7-
- 70.0 - nC
- 7.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=15.0A,
VGE=0.0/15.0V,
RG(on)=23.0Ω,RG(off)=23.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Tvj=25°C,
VCC=400V,IC=5.0A,
VGE=0.0/15.0V,
RG(on)=23.0Ω,RG(off)=23.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
min.
Value
typ.
max. Unit
- 19 - ns
- 9 - ns
- 177 - ns
- 14 - ns
- 0.28 - mJ
- 0.10 - mJ
- 0.38 - mJ
- 18 - ns
- 4 - ns
- 180 - ns
- 22 - ns
- 0.09 - mJ
- 0.03 - mJ
- 0.12 - mJ
5 Rev.2.2,2014-12-04
5 Page IGP30N65H5
Highspeedswitchingseriesfifthgeneration
1E+4
1000
Cies
Coes
Cres
100
10
1
D=0.5
0.2
0.1 0.1
0.05
0.02
0.01
single pulse
0.01
1
0 5 10 15 20 25 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
0.001
1E-6
i: 1
234
ri[K/W]: 0.07749916 0.2797936 0.2828165 0.1598907
τi[s]: 3.7E-5
3.6E-4
4.9E-3
0.04086392
1E-5 1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
1
Figure 18. IGBTtransientthermalimpedance
(D=tp/T)
11 Rev.2.2,2014-12-04
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet IGP30N65H5.PDF ] |
Número de pieza | Descripción | Fabricantes |
IGP30N65H5 | IGBT | Infineon |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |