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Datasheet C4270 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | C4270 | NPN Transistor, 2SC4270 Ordering number:EN2971
NPN Epitaxial Planar Silicon Transistor
2SC4270
UHF Converter, Local Oscillator Applications
Features
· Small noise figure : NF=3.0dB typ (f=0.9GHz)
· High power gain
: PG=12dB typ (f=0.9GHz)
· High cutoff frequency : fT=3.0GHz typ
Package Dimensions
unit:mm 2018B
| Sanyo | data |
C42 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | C4203 | NPN Transistor, 2SC4203 TOSHIBA Transistor Silicon Epitaxial Planar Type
2SC4203
Video Output for High Definition VDT High Speed Switching Applications
2SC4203
Unit: mm
· High transition frequency: fT = 400 MHz (typ.) (VCE = 10 V, IC = 70 mA)
· Low output capacitance: Cob < 5 pF (max) (VCB = 30 V) · High voltage: VCEO Toshiba data | | |
2 | C4204 | NPN Transistor, 2SC4204 Ordering number:EN2531A
NPN Epitaxial Planar Silicon Transistor
2SC4204
High-hFE, AF Amplifier Applications
Applications
· AF amplifier, various drivers.
Package Dimensions
unit:mm 2003B
[2SC4204]
5.0 4.0 4.0
Features
· Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · La Sanyo Semiconductor Corporation data | | |
3 | C4207 | NPN Transistor, 2SC4207 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4207
2SC4207
Audio Frequency General Purpose Amplifier Applications
Unit: mm
• Small package (dual type)
• High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • High hFE: hFE = 120~700 • Excellent hFE linearity: hFE Toshiba data | | |
4 | C4209 | NPN Transistor, 2SC4209 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4209
2SC4209
Driver Stage Amplifier Applications Voltage Amplifier Applications
• Complementary to 2SA1620
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter volta Toshiba data | | |
5 | C4210 | NPN Transistor, 2SC4210 2SC4210
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4210
Audio Power Amplifier Applications
• High DC current gain: hFE = 100~320 • Complementary to 2SA1621
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collec Toshiba data | | |
6 | C4212 | NPN Transistor, 2SC4212 Power Transistors
2SC4212
Silicon NPN triple diffusion planar type
For color TV horizontal deflection driver
φ 3.16±0.1
Unit: mm
8.0+0.5 –0.1 3.2±0.2
1.9±0.1
• High collector to emitter voltage VCEO • TO-126B package which requires no insulation plate for installat Panasonic Semiconductor data | | |
7 | C4213 | NPN Transistor, 2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4213
2SC4213
For Muting and Switching Applications
Unit: mm
• High emitter-base voltage: VEBO = 25 V (min) • High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) • Low on resistance: RON = 1 Ω (typ.) (IB = Toshiba data | |
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Número de pieza | Descripción | Fabricantes | |
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