|
|
Datasheet PH266-O1B Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | PH266-O1B | Stepping Motors PH Type Stepping Motors
-$i EC-IF C .TIONS
Motor
Single Shaft PH264-01
PH264-02
PH264-03
PH26S-01
PH265-02
/-- PH265-03 PH265-04
PH265-O5
PH266-01
PH266-02
PH266-03
PH268-21
PH268-22
PH268-23
PH2610-O1
PH2610-02
PH2610-03
PH296-O1
PH296-O2
PH296-O3
PH299-OI
C
PH299-O2 PH299-0 | Vexta | data |
PH2 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | PH20 | Diode, Rectifier American Microsemiconductor diode | | |
2 | PH20100S | N-channel TrenchMOS standard level FET PH20100S
N-channel TrenchMOS™ standard level FET
Rev. 02 — 17 August 2004 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Lo NXP Semiconductors data | | |
3 | PH2222 | NPN switching transistor DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PH2222A NPN switching transistor
Product specification Supersedes data of 1997 Sep 04 1999 Apr 27
Philips Semiconductors
Product specification
NPN switching transistor
FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V) NXP Semiconductors transistor | | |
4 | PH2222A | NPN switching transistor DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PH2222A NPN switching transistor
Product specification Supersedes data of 1997 Sep 04 1999 Apr 27
Philips Semiconductors
Product specification
NPN switching transistor
FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V) NXP Semiconductors transistor | | |
5 | PH2226-11OM | Radar Pulsed Power Transistor/ IlOW/ loops Pulse/ 10% Duty 2.25 - 2.55 GHz =_
rz
an AMP comcww
Radar Pulsed Power Transistor, IlOW, loops Pulse, 10% Duty PH2226-11 OM 2.25 - 2.55 GHz
Features
l l l l l l l
)_
,553 _
(22 95)
so3
v2.00
I
NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors Gold Met Tyco Electronics transistor | | |
6 | PH2226-50 | Radar Pulsed Power Transistor/ 5OW/ loops Pulse/ 10% Duty 2.2 - 2.6 GHz ,s== 7--z E -== *
2= .---- = = FE
an AMP company
Radar Pulsed Power Transistor, 5OW, loops Pulse, 10% Duty 2.2 - 2.6 GHz PH2226-50M
Features
l l l l l l l
NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors Gold Metalization Sy Tyco Electronics transistor | | |
7 | PH2323-1 | CW Power Transistor/ 1W 2.3 GHz 3
.------
an AMP comDanv
CW Power Transistor, 2.3 GHz
Features
l l l l l l l
1W
PH2323-1
v2.00
NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Hermetic Metal/Ceramic Package Tyco Electronics transistor | |
Esta página es del resultado de búsqueda del PH266-O1B. Si pulsa el resultado de búsqueda de PH266-O1B se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |