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PDF 3DD13001 Data sheet ( Hoja de datos )
| Número de pieza | 3DD13001 | |
| Descripción | NPN Transistors | |
| Fabricantes | Kexin | |
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SMD Type
NPN Transistors
3DD13001
Transistors
■ Features
● Collector-emitter Voltage: V(BR)CEO=400V
● Collector Current: IC=0.2A
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
600
400
7
0.2
0.5
150
-55 to 150
Unit
V
V
V
A
W
℃
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base Breakdown voltage
Collector-base cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Fall time
Storage time
Transition frequency
Symbol
Testconditons
V(BR)CBO IC = 100μA , IE = 0
V(BR)CEO IC = 1mA , IB = 0
V(BR)EBO IE = 100μA , IC = 0
ICBO VCB = 600V , IE = 0
IEBO VEB=7V,IC=0
VCE = 20V , IC = 20mA
hFE
VCE = 10V , IC = 0.25mA
VCE(sat) IC= 50mA, IB= 10 mA
VBE(sat) IC= 50mA, IB= 10 mA
tf IB1=-IB2=5mA, IC=50mA, VCC=45V
ts IB1=-IB2=5mA, IC=50mA, VCC=45V
fT VCE = 20 V , IC = 20 mA , f = 1 MHz
Min Typ Max Unit
600 V
400 V
7V
100 μA
100 μA
10 40
5
0.5 V
1.2 V
0.7 μs
3 μs
8 MHz
■ hFE(1) Classification
Rank
hFE
AB C D E F
10～15 15～20 20～25 25～30 30～35 35～40
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| PDF Descargar | [ Datasheet 3DD13001.PDF ] | |
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