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PDF PSMN3R0-60BS Data sheet ( Hoja de datos )
| Número de pieza | PSMN3R0-60BS | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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PSMN3R0-60BS
N-channel 60 V 3.2 mΩ standard level MOSFET in D2PAK
Rev. 1 — 22 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Tmb = 25 °C; see Figure 2
Min
-
[1] -
-
-55
VGS = 10 V; ID = 25 A; Tj = 100 °C;
see Figure 12; see Figure 13
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 13
-
-
VGS = 10 V; ID = 25 A; VDS = 30 V;
see Figure 14; see Figure 15
-
-
VGS = 10 V; Tj(init) = 25 °C;
ID = 100 A; Vsup ≤ 60 V; RGS = 50 Ω;
unclamped
-
[1] Continuous current is limited by package
Typ Max Unit
- 60 V
- 100 A
- 306 W
- 175 °C
4.32 5.1
2.7 3.2
mΩ
mΩ
28 -
130 -
nC
nC
- 800 mJ
1 page  
NXP Semiconductors
PSMN3R0-60BS
N-channel 60 V 3.2 mΩ standard level MOSFET in D2PAK
6. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see Figure 4
Minimum footprint; mounted in a
printed circuit board
Min Typ Max Unit
- 0.3 0.49 K/W
- 50 - K/W
1 003aad673
Zth
(K/W)
10−1
10−2
δ = 0.5
0.2
0.1
0.05
0.02
single shot
10−3
10−6
10−5
10−4
10−3
10−2
P
tp
δ= T
tp
T
t
10−1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN3R0-60BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© NXP B.V. 2012. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
PSMN3R0-60BS
N-channel 60 V 3.2 mΩ standard level MOSFET in D2PAK
8. Package outline
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
SOT404
D1
D
HD
E
2
13
ee
b
A
A1
mounting
base
Lp
c
Q
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b
c
D
max.
D1
mm 4.50 1.40 0.85 0.64 11 1.60
4.10 1.27 0.60 0.46
1.20
E
10.30
9.70
e
2.54
Lp HD Q
2.90 15.80 2.60
2.10 14.80 2.20
OUTLINE
VERSION
SOT404
IEC
REFERENCES
JEDEC
JEITA
Fig 18. Package outline SOT404 (D2PAK)
EUROPEAN
PROJECTION
ISSUE DATE
05-02-11
06-03-16
PSMN3R0-60BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© NXP B.V. 2012. All rights reserved.
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