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Datasheet CS6N60F Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | CS6N60F | N-Channel MOSFET BRF6N60(CS6N60F)
用途: 用于高效 DC/DC 转换和功率开关
N-Channel MOSFET/N 沟 MOS 晶体管
Purpose: These devices are well suited for high efficiency switching DC/DC converters
and switch mode power supplies. 特点: DS 之间导通电阻小、低的门槛电压、反向传输电容� |  LZG | mosfet |
| 2 | CS6N60F | VDMOS 华晶分立器件
CS6N60(F)
CS6N60(F)型 VDMOS 晶体管
1.概述与特点
CS6N60(F)是 N 沟道 600V 系列 VDMOS 晶体管， 主要用于电源适配器、 充电器等各种功率开关 电路。 具有如下特点： ● 开关速度快 ● 通态电阻小 ● 可并联使用 ● 驱动简� |  ETC | data |
| 3 | CS6N60FA9H | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS6N60F A9H
○R
General Description：
CS6N60F A9H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can |  Huajing Microelectronics | mosfet |
| 4 | CS6N60FA9H-G | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS6N60F A9H-G
○R
General Description：
CS6N60F A9H-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
| Huajing Microelectronics | mosfet |
| 5 | CS6N60FA9TY | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS6N60F A9TY
○R
General Description：
CS6N60F A9TY, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
ca | Huajing Microelectronics | mosfet |
CS6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CS6-04 | Thyristor
DataShee
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ETC thyristor | | |
| 2 | CS6-06 | Thyristor
DataShee
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ETC thyristor | | |
| 3 | CS6-07 | Thyristor
DataShee
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ETC thyristor | | |
| 4 | CS6-08 | Thyristor
DataShee
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ETC thyristor | | |
| 5 | CS60 | Phase Control Thyristor CS 60
Phase Control Thyristor
VRRM = 1200-1600 V IT(RMS) = 75 A IT(AV)M = 48 A
Preliminary Data Sheet
VRSM VDSM V 1300 1500 1700 VRRM VDRM V 1200 1400 1600 CS 60-12io1 CS 60-14io1 CS 60-16io1 Type
A C
C A G A (TAB)
PLUS247
G
C = Cathode, A = Anode, G = Gate
Symbol IT(RMS) IT(AV)M ITSM
Test C  IXYS Corporation thyristor | | |
| 6 | CS60-12IO1 | Phase Control Thyristor CS 60
Phase Control Thyristor
VRRM = 1200-1600 V IT(RMS) = 75 A IT(AV)M = 48 A
Preliminary Data Sheet
VRSM VDSM V 1300 1500 1700 VRRM VDRM V 1200 1400 1600 CS 60-12io1 CS 60-14io1 CS 60-16io1 Type
A C
C A G A (TAB)
PLUS247
G
C = Cathode, A = Anode, G = Gate
Symbol IT(RMS) IT(AV)M ITSM
Test C IXYS Corporation thyristor | | |
| 7 | CS60-14IO1 | Phase Control Thyristor CS 60
Phase Control Thyristor
VRRM = 1200-1600 V IT(RMS) = 75 A IT(AV)M = 48 A
Preliminary Data Sheet
VRSM VDSM V 1300 1500 1700 VRRM VDRM V 1200 1400 1600 CS 60-12io1 CS 60-14io1 CS 60-16io1 Type
A C
C A G A (TAB)
PLUS247
G
C = Cathode, A = Anode, G = Gate
Symbol IT(RMS) IT(AV)M ITSM
Test C IXYS Corporation thyristor | |
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