|
|
Datasheet BAS516 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BAS516 | DIODE RoHS BAS516
BAS516 Switching Diodes
DFEATURES z Small surface mounting type Tz High switching speed
O.,LMarking: 61
0.30
1.20 1.60
0.80
0.10 0.65
SOD-523
CMaximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
ICParameter
DC reverse voltage
NMean rectifying current OPeak forw | WEJ | diode |
2 | BAS516 | High-speed diode DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BAS516 High-speed diode
Product specification
1998 Aug 31
Philips Semiconductors
High-speed diode
Product specification
BAS516
FEATURES • Ultra small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 75 V � | Philips | diode |
3 | BAS516 | High-speed switching diodes BAS16 series
High-speed switching diodes
Rev. 6 — 24 September 2014
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages.
Table 1. Product overview
Type number Package
NXP
JEITA
BAS16
| NXP Semiconductors | diode |
4 | BAS516 | High-speed diode | Leshan Radio Company | diode |
5 | BAS516 | Switching Diodes JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
BAS516
FEATURES z z Small surface mounting type High switching speed
Switching Diodes
SOD-523
+
-
Marking: 61
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter DC reverse voltag | Jiangsu Changjiang Electronics | diode |
BAS Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BAS100ATB6 | SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES BAS100ATB6
SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES
VOLTAGE 100 Volts
FEATURES
• Smallest 100V Dual, isolated Schottky diode currently available • Lead free in comply with EU RoHS 2011/65/EU directives • Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICA Pan Jit International diode | | |
2 | BAS101 | High Voltage Switching Diodes w w w . D a t a S h e e t 4 U . c o m
BAS101; BAS101S
High-voltage switching diodes
Rev. 01 — 8 September 2006 Product data sheet
1. Product profile
1.1 General description
High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package.
Table 1. Produc NXP Semiconductors diode | | |
3 | BAS101S | High Voltage Switching Diodes w w w . D a t a S h e e t 4 U . c o m
BAS101; BAS101S
High-voltage switching diodes
Rev. 01 — 8 September 2006 Product data sheet
1. Product profile
1.1 General description
High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package.
Table 1. Produc NXP Semiconductors diode | | |
4 | BAS11 | Controlled avalanche rectifiers DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D122
BAS11; BAS12 Controlled avalanche rectifiers
Product specification Supersedes data of April 1996 1996 Sep 26
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
FEATURES • Glass passivated • High maximum o NXP Semiconductors rectifier | | |
5 | BAS116 | SWITCHING DIODE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAS116 SWITCHING DIODE
FEATURES z Low leakage current applications z Medium speed switching times
MARKING: JV
SOT-23
1 3
2
Maximum Ratings @Ta=25℃
Parameter Peak Repetitive Peak Reverse Voltage Working Peak Re JCET diode | | |
6 | BAS116 | LOW LEAKAGE SWITCHING DIODE BAS116
LOW LEAKAGE SWITCHING DIODE
Features • Plastic SMD package • Low leakage current • High switching speed
Application • Low leakage current applications in
surface mounted circuits.
3
12
Marking Code: JV SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Repetiti SEMTECH diode | | |
7 | BAS116 | LOW LEAKAGE SWITCHING DIODES BAS116/BAW156/BAV170/BAV199
SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES
VOLTAGE 100 Volts
POWER 250mWatts
FEATURES
• Suface mount package ideally suited for automatic insertion. • Very low leakage current. 2pA typical at VR=75V. • Low capacitance. 2pF max at VR=0V, f=1MHz • In compliance Pan Jit International diode | |
Esta página es del resultado de búsqueda del BAS516. Si pulsa el resultado de búsqueda de BAS516 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |