DataSheet.es    


Datasheet T435800W Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1T435800W4A TRIACS

® T4 Series 4A TRIACS SNUBBERLESS™ & LOGIC LEVEL MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IGTT (Q1) Value 4 600 to 800 5 to 35 Unit A V A2 G A2 A1 A2 mA A1 A2 G A1 A2 G DESCRIPTION Based on ST’s Snubberless / Logic level technology providing high commutation performances, the T4 series i
STMicroelectronics
STMicroelectronics		triac
2T435800W4A TRIACs

http://www.DataSheet4U.net/ datasheet pdf - http://www.DataSheet4U.net/ http://www.DataSheet4U.net/ datasheet pdf - http://www.DataSheet4U.net/ http://www.DataSheet4U.net/ datasheet pdf - http://www.DataSheet4U.net/ http://www.DataSheet4U.net/ datasheet pdf - http://www.DataSheet4U.net/ http
JIEJIE MICROELECTRONICS
JIEJIE MICROELECTRONICS		triac


T43 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1T430QVN01.0Display Module

T430QVN01.0 Product Specification Rev 0.2 Model Name: T430QVN01.0 Issue Date: 2014/09/01 (＊) Preliminary Specifications ( ) Final Specifications Customer Signature Approved By Date AUO Approval By PM Director Date _________________________________ ____________________________________ Note R
AUO
AUO		display
2T4312816A8M x 16 SDRAM

Taiwan Memory Technology
Taiwan Memory Technology		data
3T431616A1M x 16 SDRAM

TM
TM		data
4T431616B1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

tm • • • • • • • • • TE CH T431616B SDRAM FEATURES +2.7 to +3.6V power supply Dual banks operation LVTTL compatible with multiplexed address All inputs are sampled at the positive going edge of system clock Burst Read Single-bit Write operation DQM for masking Auto refresh and s
TMT
TMT		data
5T431616C1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

tm • • • • • TE CH T431616C SDRAM FEATURES 3.3V power supply Clock cycle time : 6 / 7 ns Dual banks operation LVTTL compatible with multiplexed address All inputs are sampled at the positive going edge of system clock • Burst Read Single-bit Write operation • DQM for masking • Aut
TMT
TMT		data
6T431616D(T431616D/E) 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

tm TE CH T431616D/E SDRAM FEATURES Fast access time: 5/6/7 ns • Fast clock rate: 200/166/143 MHz • Self refresh mode: standard and low power • Internal pipelined architecture • 512K word x 16-bit x 2-bank • Programmable Mode registers - CAS# Latency: 1, 2, or 3 - Burst Length: 1, 2, 4,
TMT
TMT		data
7T431616E(T431616D/E) 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

tm TE CH T431616D/E SDRAM FEATURES Fast access time: 5/6/7 ns • Fast clock rate: 200/166/143 MHz • Self refresh mode: standard and low power • Internal pipelined architecture • 512K word x 16-bit x 2-bank • Programmable Mode registers - CAS# Latency: 1, 2, or 3 - Burst Length: 1, 2, 4,
TMT
TMT		data



Esta página es del resultado de búsqueda del T435800W. Si pulsa el resultado de búsqueda de T435800W se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap