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PDF IXTQ74N20P Data sheet ( Hoja de datos )
| Número de pieza | IXTQ74N20P | |
| Descripción | PolarHT Power MOSFET | |
| Fabricantes | IXYS | |
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PolarHTTM
Power MOSFET
IXTQ 74N20P
IXTT 74N20P
N-Channel Enhancement Mode
Avalanche Energy Rated
V = 200 VDSS
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ID25 = 74
A
=RDS(on) 34 mΩ
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (TO-3P)
TO-3P
TO-268
Maximum Ratings
TO-3P (IXTQ)
200 V
200 V
± 20
± 30
74
200
60
40
1.0
V
V
G
A DS
A
A
mJ TO-268 (IXTT)
J
(TAB)
10 V/ns
480
-55 ... +175
175
-55 ... +150
W
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
5.5 g
5.0 g
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
200 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
34 mΩ
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99119C(08/05)
1 page  
1.00
0.10
0.01
1
Fig. 13. Maxim um Transient Therm al Resistance
IXTQ 74N20P
IXTT 74N20P
www.DataSheet4U.com
10 100
Pulse Width - milliseconds
1000
© 2005 IXYS All rights reserved
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTQ74N20P.PDF ] | |
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