PDF IS45S16100C1 Data sheet ( Hoja de datos )

Número de pieza	IS45S16100C1
Descripción	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
Fabricantes	Integrated Silicon Solution
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No Preview Available ! IS45S16100C1 ISSI® www.DataSheet4U.com 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM JANUARY 2006 FEATURES • Clock frequency: 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11 (bank select) • Single 3.3V power supply • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • 4096 refresh cycles every 64 ms • Random column address every clock cycle • Programmable CAS latency (2, 3 clocks) • Burst read/write and burst read/single write operations capability • Burst termination by burst stop and precharge command • Byte controlled by LDQM and UDQM • Automotive Temperature Range Option A: 0oC to +70oC Option A1: -40oC to +85oC • Packages: 400-mil 50-pin TSOP-II, 60-ball fBGA • Lead-free package option DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS45S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. PIN CONFIGURATIONS 50-Pin TSOP (Type II) VDD DQ0 DQ1 GNDQ DQ2 DQ3 VDDQ DQ4 DQ5 GNDQ DQ6 DQ7 VDDQ LDQM WE CAS RAS CS A11 A10 A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 GND 49 DQ15 48 IDQ14 47 GNDQ 46 DQ13 45 DQ12 44 VDDQ 43 DQ11 42 DQ10 41 GNDQ 40 DQ9 39 DQ8 38 VDDQ 37 NC 36 UDQM 35 CLK 34 CKE 33 NC 32 A9 31 A8 30 A7 29 A6 28 A5 27 A4 26 GND PIN DESCRIPTIONS A0-A11 A0-A10 A11 A0-A7 DQ0 to DQ15 CLK CKE CS RAS Address Input Row Address Input Bank Select Address Column Address Input Data DQ System Clock Input Clock Enable Chip Select Row Address Strobe Command CAS WE LDQM UDQM VDD GND VDDQ GNDQ NC Column Address Strobe Command Write Enable Lower Bye, Input/Output Mask Upper Bye, Input/Output Mask Power Ground Power Supply for DQ Pin Ground for DQ Pin No Connection Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. C 01/03/06 1 1 page IS45S16100C1 ABSOLUTE MAXIMUM RATINGS(1) Symbol VDD MAX VDDQ MAX VIN VOUT PD MAX ICS TOPR Parameters Maximum Supply Voltage Maximum Supply Voltage for Output Buffer Input Voltage Output Voltage Allowable Power Dissipation Output Shorted Current Operating Temperature TSTG Storage Temperature ISSI ® www.DataSheet4U.com Rating Unit –1.0 to +4.6 V –1.0 to +4.6 V –1.0 to +4.6 V –1.0 to +4.6 V 1W 50 mA A 0 to +70 °C A1 -40 to +85 °C –55 to +150 °C DC RECOMMENDED OPERATING CONDITIONS(2) (A: TA = 0°C to +70°C, A1: TA = -40°C to +85°C) Symbol VDD, VDDQ VIH VIL Parameter Supply Voltage Input High Voltage(3) Input Low Voltage(4) Min. 3.0 2.0 -0.3 Typ. 3.3 — — Max. 3.6 VDD + 0.3 +0.8 Unit V V V CAPACITANCE CHARACTERISTICS(1,2) (At TA = 0 to +25°C, VDD = VDDQ = 3.3 ± 0.3V, f = 1 MHz) Symbol Parameter Typ. Max. Unit CIN1 Input Capacitance: A0-A11 — 4 pF CIN2 Input Capacitance: (CLK, CKE, CS, RAS, CAS, WE, LDQM, UDQM) — 4 pF CI/O Data Input/Output Capacitance: DQ0-DQ15 — 5 pF Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. All voltages are referenced to GND. 3. VIH (max) = VDDQ + 2.0V with a pulse width ≤ 3 ns. 4. VIL (min) = VDDQ - 2.0V with a pulse width ≤ 3 ns. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. C 01/03/06 5 5 Page IS45S16100C1 COMMANDS (cont.) Self-Refresh Command CLK CKE CS RAS CAS WE A0-A9 A10 A11 Clock Suspend Command CLK CKE BANK(S) ACTIVE CS RAS CAS WE A0-A9 NOP A10 A11 NOP NOP NOP ISSI ® www.DataSheet4U.com Power Down Command CLK CKE ALL BANKS IDLE CS RAS CAS WE A0-A9 NOP A10 A11 NOP NOP NOP Burst Stop Command CLK CKE HIGH CS RAS CAS WE A0-A9 A10 A11 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. C 01/03/06 11 11 Page

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