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PDF HYMD232M646CJF6-H Data sheet ( Hoja de datos )
| Número de pieza | HYMD232M646CJF6-H | |
| Descripción | Unbuffered DDR SO-DIMM | |
| Fabricantes | Hynix Semiconductor | |
| Logotipo |  |
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Unbuffered DDR SO-DIMM
HYMD232M646C(L)F6-J/M/K/H/L
Revision History
No. History
0.1 Defined Target Spec.
0.2 Defined Cap. Value
0.3
1) Reflected a "notational" change in module thickness on page 17 - Not Real ! -
2) Corrected some typos
Date
Nov. 2003
Jan. 2004
Apr. 2004
Remark
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.3 / Apr. 2004
1
1 page  
ABSOLUTE MAXIMUM RATINGS
www.DataSheet4U.com
HYMD232M646C(L)F6-J/M/K/H/L
Parameter
Operating Temperature (Ambient)
Storage Temperature
Voltage on Any Pin relative to VSS
Voltage on VDD relative to VSS
Voltage on VDDQ relative to VSS
Output Short Circuit Current
Power Dissipation
Soldering Temperature Þ Time
Symbol
TA
TSTG
VIN, VOUT
VDD
VDDQ
IOS
PD
TSOLDER
Rating
0 ~ 70
-55 ~ 125
-0.5 ~ 3.6
-0.5 ~ 3.6
-0.5 ~ 3.6
50
1.0 x # of Components
260 / 10
Note : Operation at above absolute maximum rating can adversely affect device reliability
Unit
oC
oC
V
V
V
mA
W
oC / Sec
DC OPERATING CONDITIONS (TA=0 to 70 oC, Voltage referenced to VSS= 0V)
Parameter
Symbol
Min
Typ.
Max
Power Supply Voltage
VDD
2.3 2.5
Power Supply Voltage
VDDQ
2.3 2.5
Input High Voltage
VIH
VREF + 0.15
-
Input Low Voltage
VIL
-0.3 -
Termination Voltage
VTT
VREF - 0.04
VREF
Reference Voltage
VREF
0.49*VDDQ 0.5*VDDQ
Note :
1. VDDQ must not exceed the level of VDD.
2. VIL (min) is acceptable -1.5V AC pulse width with < 5ns of duration.
3. The value of VREF is approximately equal to 0.5VDDQ.
2.7
2.7
VDDQ + 0.3
VREF - 0.15
VREF + 0.04
0.51*VDDQ
AC OPERATING CONDITIONS (TA=0 to 70 oC, Voltage referenced to VSS = 0V)
Unit
V
V
V
V
V
V
Note
1
2
3
Parameter
Symbol
Min
Max Unit Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals
Input Differential Voltage, CK and /CK inputs
Input Crossing Point Voltage, CK and /CK inputs
VIH(AC)
VIL(AC)
VID(AC)
VIX(AC)
VREF + 0.31
0.7
0.5*VDDQ-0.2
VREF - 0.31
VDDQ + 0.6
0.5*VDDQ+0.2
V
V
V
V
1
2
Note :
1. VID is the magnitude of the difference between the input level on CK and the input on /CK.
2. The value of V IX is expected to equal 0.5*V DDQ of the transmitting device and must track variations in the DC level of the same.
Rev. 0.3 / Apr. 2004
5
5 Page 
www.DataSheet4U.com
HYMD232M646C(L)F6-J/M/K/H/L
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
- continued -
Parameter
Write DQS High Level Width
Write DQS Low Level Width
Clock to First Rising edge of DQS-In
Data-In Setup Time to DQS-In (DQ & DM)
Data-in Hold Time to DQS-In (DQ & DM)
DQ & DM Input Pulse Width
Read DQS Preamble Time
Read DQS Postamble Time
Write DQS Preamble Setup Time
Write DQS Preamble Hold Time
Write DQS Postamble Time
Mode Register Set Delay
Exit Self Refresh to Any Execute Command
Average Periodic Refresh Interval
Symbol
tDQSH
tDQSL
tDQSS
tDS
tDH
tDIPW
tRPRE
tRPST
tWPRES
tWPREH
tWPST
tMRD
tXSC
tREFI
DDR333
Min Max
0.35 -
0.35 -
0.75 1.25
0.45 -
0.45 -
1.75 -
0.9 1.1
0.4 0.6
0-
0.25 -
0.4 0.6
2-
200 -
- 7.8
DDR266(2-2-2)
Min Max
0.35 -
0.35 -
0.72 1.28
0.5 -
0.5 -
1.75 -
0.9 1.1
0.4 0.6
0-
0.25 -
0.4 0.6
2-
200 -
- 7.8
Unit Note
CK
CK
CK
ns 6,7, 11~13
ns 6,7, 11~13
ns
CK
CK
CK
CK
CK
CK
CK 8
us
Rev. 0.3 / Apr. 2004
11
11 Page | ||
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