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PDF HT82K76E-L Data sheet ( Hoja de datos )
| Número de pieza | HT82K76E-L | |
| Descripción | (HT82K70E-L / HT82K76E-L) I/O Type 8-Bit OTP MCU | |
| Fabricantes | Holtek | |
| Logotipo |  |
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HT82K70E-L/HT82K76E-L
I/O Type 8-Bit OTP MCU
Technical Document
· Application Note
- HA0075E MCU Reset and Oscillator Circuits Application Note
Features
· Operating voltage: 1.8V~5.5V
· 43 bidirectional I/O lines
· 4K´16 Program Memory - HT82K70E-L
8K´16 Program Memory - HT82K76E-L
· 216´8 Data RAM
· One external interrupt input shared with I/O lines
· Two 16-bit programmable Timer/Event Counters
with overflow interrupt
· Watchdog Timer function
· Power down and wake-up functions to reduce power
consumption
· Crystal and RC oscillator
· 8-level subroutine nesting
· Bit manipulation instruction
· Low Voltage Detector
· Table read instructions
· 63 powerful instructions
· All instructions executed in one or two machine
cycles
· Integrated SPI interface (Max. 8Mb/s)
· Some pins with CMOS and NMOS outputs
· 28/48-pin SSOP and 32-pin QFN packages
General Description
The device is an 8-bit high performance, RISC architec-
ture microcontroller devices specifically designed for
multiple I/O control product applications. The low volt-
age operating requirements of these devices opens up
new application possibilities.
The advantages of low power consumption, I/O flexibil-
ity, timer functions, oscillator options, Power-down and
wake-up functions, Watchdog timer, motor driving, in-
dustrial control, consumer products, subsystem control-
lers, etc.
Selection Table
Part No.
Program
Memory
HT82K70E-L
www.DataSheet4UH.cTo8m2K76E-L
4K´16
8K´16
Data
Memory
216´8
I/O
43
16-bit
Timer
LVD for
Battery-in
SPI
2 ÖÖ
Stack
Package
8
28/48SSOP,
32QFN
Rev. 1.00
1 September 15, 2009
1 page  
HT82K70E-L/HT82K76E-L
A.C. Characteristics
Symbol
Parameter
fSYS System Clock (Crystal OSC)
fRCSYS
Watchdog OSC with 6-stage
Prescaler Period
fSPI SPI Clock
tWDT
Watchdog Time-out Period
(WDT OSC)
tRES External Reset Low Pulse Width
tCONFIGURE System Start-up Timer Period
tOST Oscillation Start-up Timer Period
Note: tSYS=1/fSYS
tRCSYS=1/fRCSYS
Test Conditions
VDD Conditions
1.8V~5.5V
¾
3.3V~5.5V
3V ¾
¾¾
3V WDTS=1
¾¾
¾¾
¾¾
Ta=25°C
Min. Typ. Max. Unit
400 ¾ 4000 kHz
400 ¾ 8000 kHz
¾ 71 ¾ ms
fSYS/64 ¾ fSYS ¾
¾ 4.57 ¾
ms
1 ¾ ¾ ms
¾ 1024 ¾ tRCSYS
¾ 512 ¾ tSYS
D.C. - A.C. Power-on Reset Characteristics
Ta=25°C
Symbol
IPOR
RSRPOR
VPOR_MAX
tPOR
Parameter
Operating Current
Test Conditions
VDD
1.8V~
5.5V
Conditions
¾
Min.
¾
VDD Rise Rate to Ensure
Power-on Reset
¾
Without 0.1mF between
VDD and VSS
0.05
Maximum VDD Start Voltage to
Ensure Power-on Reset
¾
Ta=25°C, Without 0.1mF
between VDD and VSS
0.9
¾
Without 0.1mF between
VDD and VSS
Power-on Reset Low Pulse Width
¾
With 0.1mF between
VDD and VSS
2
10
Typ.
¾
¾
¾
¾
¾
Max.
0.7
¾
1.5
¾
¾
Unit
mA
V/ms
V
ms
ms
www.DataSheet4U.com
Rev. 1.00
5 September 15, 2009
5 Page 
HT82K70E-L/HT82K76E-L
Data Memory
The Data Memory is a volatile area of 8-bit wide RAM
internal memory and is the location where temporary in-
formation is stored. Divided into two sections, the first of
these is an area of RAM where special function registers
are located. These registers have fixed locations and
are necessary for correct operation of the device. Many
of these registers can be read from and written to di-
rectly under program control, however, some remain
protected from user manipulation. The second area of
Data Memory is reserved for general purpose use. All
locations within this area are read and write accessible
under program control.
Structure
The two sections of Data Memory, the Special Purpose
and General Purpose Data Memory are located at con-
secutive locations. All are implemented in RAM and are
8 bits wide but the length of each memory section is dic-
tated by the type of microcontroller chosen. The start
address of the Data Memory for all devices is the ad-
dress ²00H². Registers which are common to all
microcontrollers, such as ACC, PCL, etc., have the
same Data Memory address.
S p e c ia l
P u rp o s e
D a ta
M e m o ry
G e n e ra l
P u rp o s e
D a ta
M e m o ry
00H
25H
28H
www.DataSheet4U.com
FFH
Data Memory Structure
Note:
Most of the Data Memory bits can be directly
manipulated using the ²SET [m].i² and ²CLR
[m].i² with the exception of a few dedicated bits.
The Data Memory can also be accessed
through the memory pointer register MP.
General Purpose Data Memory
All microcontroller programs require an area of
read/write memory where temporary data can be stored
and retrieved for use later. It is this area of RAM memory
that is known as General Purpose Data Memory. This
area of Data Memory is fully accessible by the user pro-
gram for both read and write operations. By using the
²SET [m].i² and ²CLR [m].i² instructions individual bits
can be set or reset under program control giving the
user a large range of flexibility for bit manipulation in the
Data Memory.
Special Purpose Data Memory
This area of Data Memory is where registers, necessary
for the correct operation of the microcontroller, are
stored. Most of the registers are both readable and
writable but some are protected and are readable only,
the details of which are located under the relevant Spe-
cial Function Register section. Note that for locations
that are unused, any read instruction to these addresses
will return the value ²00H².
0 0 H IA R 0
01H M P 0
0 2 H IA R 1
03H M P 1
04H
05H A C C
06H P C L
07H TB LP
08H TB LH
09H W D TS
0A H S TA TU S
0 B H IN T C 0
0C H TM R 0H
0D H TM R 0L
0E H TM R 0C
0FH TM R 1H
10H TM R 1L
11H TM R 1C
12H P A
13H P A C
14H P B
15H P B C
16H P C
17H P C C
18H P D
19H P D C
1A H P E
1B H P E C
1C H P F
1D H P FC
1 E H IN T C 1
1FH TB H P
20H
21H S B C R
22H S B D R
23H W S R
24H C TLR
25H
26H
27H
: U n u s e d R e a d a s "0 0 "
Rev. 1.00
11 September 15, 2009
11 Page | ||
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