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Datasheet KMBT3906 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | KMBT3906 | PNP Transistors SMD Type
PNP Transistors KMBT3906(MMBT3906)
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
Features
+0.1 2.4-0.1
Epitaxial planar die construction
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ra | Guangdong Kexin Industrial | transistor |
KMB Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | KMB010P30QA | P-Channel Trench MOSFET SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Battery pack.
FEATURES VDSS=-30V, ID=-10A. Drain-Source ON Resistance. | KEC | |
2 | KMB012N30QA | N-Channel Trench MOSFET SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for DC/DC Converter and Battery pack..
FEATURES VDSS=30V, ID=12A. Drain to | KEC | |
3 | KMB014P30QA | Trench MOSFET
SEMICONDUCTOR
TECHNICAL DATA
KMB014P30QA
P-Ch Trench MOSFET
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance,, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for portable for port | KEC | |
4 | KMB030N30D | N-Channel Trench MOSFET SEMICONDUCTOR
TECHNICAL DATA
KMB030N30D
N-Ch Trench MOSFET
General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems.
FEATURES VDSS=30V, ID=30A. Low Drain-Source ON Resistance. : RDS(ON) | KEC | |
5 | KMB035N40DB | N-Channel Trench MOSFET SEMICONDUCTOR
TECHNICAL DATA
KMB035N40DB
N-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power Supply.
FE | KEC | |
6 | KMB035N40DC | N-Channel Trench MOSFET SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and power Supply.
FEATURES VDSS=40V, ID=35A. Low Drai | KEC | |
7 | KMB050N60P | N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction , electronic lamp ballasts based on | KEC |
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Número de pieza | Descripción | Fabricantes | |
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