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UGF27025 の電気的特性と機能

UGF27025のメーカーはCREEです、この部品の機能は「28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 UGF27025
部品説明 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
メーカ CREE
ロゴ CREE ロゴ 




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UGF27025 Datasheet, UGF27025 PDF,ピン配置, 機能
UGF27025
25W, 2.7 GHz, 28V Broadband RF Power N-Channel
Enhancement-Mode Lateral MOSFET
Designed for base station applications in the frequency band 2.5 to 2.7 GHz. Rated with a
minimum output power of 25W, it is ideal for CW and Multi-Tone Amplifiers in Class AB operation.
ALL GOLD metal system for highest reliability
Industry standard package
Internally matched for repeatable manufacturing
High gain, high efficiency and high linearity
Integrated ESD Protection.
Maximum gain and insertion phase flatness.
Output load VSWR tolerance 10:1 all phase angles at
28VDC, 2500MHz, 25W (CW) output power.
Common source.
Application Specific Performance, 2.7 GHz
Typical 2-Tone Performance
Average Load Power – 12.5 W
ηD – 30%
Power Gain – 11.5 dB
IMD3: -30dBc @ -100kHz/ +100KHz
VDD – 28V
www.DataSheet4IUD.cQom– 330mA
Typical CW Performance
Average Load Power – 25 W
ηD – 38%
Power Gain – 11.0 dB
VDD – 28V
IDQ – 330mA
Package Type 440159
PN: UGF27025F
Page 1 of 7
Specifications subject to change without notice
http://www.cree.com/
UGF27025 Rev. 1

1 Page





UGF27025 pdf, ピン配列
UGF27025
AC Characteristics (Tc=25°C unless otherwise specified)
Rating
Symbol
Min Typ Max Unit
Input capacitance * (including matching capacitor)
(VDS=28V, VGS=0V, f = 1MHz)
Output capacitance * (including matching capacitor)
(VDS= 28V, VGS=0V, f = 1MHz)
Feedback capacitance *
(VDS=28V, VGS=0V, f = 1MHz)
* Part is internally matched on input and output.
CISS
COSS
CRSS
- 74 - pF
- 352 - pF
- 1.6 - pF
RF and Functional Tests (In Cree Microwave Broadband Fixture, Tc=25° C unless otherwise specified)
Rating
Symbol
Min Typ Max Unit
CW Low Power Gain, Pout=8W
VDD=28V, IDQ=330mA, f=2700 MHz
CW Power Gain, Pout = 25 W
VDD=28V, IDQ=330mA, f=2700 MHz
CW Drain Efficiency, Pout = 25 W,
f=2700 MHz, VDD=28V, IDQ=330mA
Two-Tone Common-Source Amplifier Power Gain
VDD=28V, IDQ=330mA, Pout = 25 W PEP
f1 =2700 MHz and f2=2700.1 MHz
Two-Tone Intermodulation Distortion
VDD=28V, IDQ=330mA, Pout = 25 W PEP
f1 =2700 MHz and f2=2700.1 MHz
Two-Tone Drain Efficiency
VDD=28V, IDQ=330mA, Pout = 25 W PEP
f1 =2700 MHz and f2=2700.1 MHz
Input Return Loss
VDD =28V, Pout = 25 W PEP, IDQ=330mA
f1 =2500 MHz and 2700 MHz, Tone Spacing =
www.DataShee1t40U0.kcoHmz
Load Mismatch Tolerance
VDS=28V, IDQ= 330 mA, Pout=25W, f=2500 MHz
GL
GP
ηD
GTT
IMD
ηD2Τ
IRL
VSWR
11 12 - dB
10 11 - dB
34 38 - %
10.5 11.5 - dB
- -30 -28 dBc
26 30 - %
- - -9 dB
10:1 - - Ψ
CAUTION - MOS Devices are susceptible to damage from Electrostatic Discharge (ESD). Appropriate
precautions in handling, packaging and testing MOS devices must be observed.
Page 3 of 7
Specifications subject to change without notice
http://www.cree.com/
UGF27025 Rev. 1


3Pages


UGF27025 電子部品, 半導体
Product Dimensions
UGF27025F -Package Number 440159
UGF27025
www.DataSheet4U.com
Page 6 of 7
Specifications subject to change without notice
http://www.cree.com/
UGF27025 Rev. 1

6 Page



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部品番号部品説明メーカ
UGF27025

28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

CREE
CREE


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