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SPN1304 の電気的特性と機能

SPN1304のメーカーはSYNC POWERです、この部品の機能は「N-Channel Enhancement Mode MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 SPN1304
部品説明 N-Channel Enhancement Mode MOSFET
メーカ SYNC POWER
ロゴ SYNC POWER ロゴ 




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SPN1304 Datasheet, SPN1304 PDF,ピン配置, 機能
SPN1304
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN1304 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹ 20V/2.0A,RDS(ON)=225m@VGS=4.5V
‹ 20V/1.5A,RDS(ON)=315m@VGS=2.5V
‹ 20V/1.0A,RDS(ON)=425m@VGS=1.8V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOT-323 ( SC–70 ) package design
PIN CONFIGURATION ( SOT-323 ; SC-70 )
www.DataSheet4U.com
PART MARKING
2007/12/18 Ver.1
Page 1

1 Page





SPN1304 pdf, ピン配列
SPN1304
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
wwwI.nDpatuatSCheaept4aUc.ictoamnce
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID= 250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±12V
VDS= 20V,VGS=0V
IDSS VDS= 20V,VGS=0V
TJ=55
ID(on) VDS4.5V,VGS =5V
RDS(on)
gfs
VSD
VGS=4.5V,ID=2.0A
VGS=2.5V,ID=1.5A
VGS=1.8V,ID=1.0A
VDS=10V,ID=1.2A
IS=0.5A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=10V,VGS=4.5V,
ID0.7A
VDS=10VGS=0V
f=1MHz
VDD=10V,RL=10,
ID1.0A
VGEN=4.5V ,RG=6
20 V
0.35 1.0
100 nA
1
5 uA
2A
0.150
0.210
0.320
2.6
0.8
0.225
0.315
0.425
1.2
S
V
1.2 1.5
0.2 nC
0.3
110
34 pF
16
5 10
8 15 ns
10 18
1.2 2.8
2007/12/18 Ver.1
Page 3


3Pages


SPN1304 電子部品, 半導体
SPN1304
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
www.DataSheet4U.com
2007/12/18 Ver.1
Page 6

6 Page



ページ 合計 : 8 ページ
 
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[ SPN1304 データシート.PDF ]


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共有リンク

Link :


部品番号部品説明メーカ
SPN1304

N-Channel Enhancement Mode MOSFET

SYNC POWER
SYNC POWER


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