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SPN7002D の電気的特性と機能

SPN7002DのメーカーはSYNC POWERです、この部品の機能は「Dual N-Channel Enhancement Mode MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 SPN7002D
部品説明 Dual N-Channel Enhancement Mode MOSFET
メーカ SYNC POWER
ロゴ SYNC POWER ロゴ 




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SPN7002D Datasheet, SPN7002D PDF,ピン配置, 機能
SPN7002D
Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN7002D is the Dual N-Channel enhancement
mode field effect transistors are produced using high
cell density DMOS technology. These products have
been designed to minimize on-state resistance while
provide rugged, reliable, and fast switching
performance. They can be used in most applications
requiring up to 300mA DC and can deliver pulsed
currents up to 1.0A. These products are particularly
suited for low voltage, low current applications such as
small servo motor control, power MOSFET gate
drivers, and other switching applications.
APPLICATIONS
z Drivers: Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc.
z High saturation current capability. Direct
Logic-Level Interface: TTL/CMOS
z Battery Operated Systems
z Solid-State Relays
FEATURES
‹ 60V/0.50A , RDS(ON)= 5.0@VGS=10V
‹ 60V/0.30A , RDS(ON)= 5.5@VGS=5V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOT-363 package design
PIN CONFIGURATION ( SOT-363 / SC-70-6L )
www.DataSheet4U.com
PART MARKING
2006/09/10 Ver.1
Page 1

1 Page





SPN7002D pdf, ピン配列
SPN7002D
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25Unless otherwise noted)
Parameter
Symbol
Conditions
Min. Typ Max. Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Source-drain Current
Source-drain Current (pulsed)
Forward Transconductance
Diode Forward Voltage
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=60V,VGS=0V
IDSS VDS=60V,VGS=0V
TJ=125
VGS=10V,ID=0.50A
RDS(on) VGS= 5V,ID=0.30A
VGS= 4.5V,ID=0.05A
ISD
ISDM (2)
Gfs(1) VDS = 10 V, ID = 0.5 A
VSD(1) VGS = 0 V, IS = 0.12A
60 V
1.0 1.7 2.5
±100 nA
1
10 uA
3.5 5.0
4.0 5.5
3.7 5.5
0.35 A
1.4 A
0.6 S
0.85 1.5 V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
wwwR.DeavtaeSrsheeeTt4rUa.ncsofmer Capacitance
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDD = 30 V, ID = 1 A,
VGS = 5 V
VDS = 25 V, f = 1 MHz,
VGS = 0
VDD = 30 V, ID = 0.5 A
RG = 4.7VGS = 4.5 V
(1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
1.4 2.0
0.8 nC
0.5
43
20 pF
6
5
15 ns
7
8
2006/09/10 Ver.1
Page 3


3Pages


SPN7002D 電子部品, 半導体
SPN7002D
Dual N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
www.DataSheet4U.com
2006/09/10 Ver.1
Page 6

6 Page



ページ 合計 : 9 ページ
 
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共有リンク

Link :


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SPN7002K

N-Channel Enhancement Mode MOSFET

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