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SPP102 の電気的特性と機能

SPP102のメーカーはSYNC POWERです、この部品の機能は「Dual P-Channel Enhancement Mode MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 SPP102
部品説明 Dual P-Channel Enhancement Mode MOSFET
メーカ SYNC POWER
ロゴ SYNC POWER ロゴ 




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SPP102 Datasheet, SPP102 PDF,ピン配置, 機能
SPP1023
Dual P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP1023 is the Dual P-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹ P-Channel
-20V/0.45A,RDS(ON)= 0.52@VGS=-4.5V
-20V/0.35A,RDS(ON)= 0.70@VGS=-2.5V
-20V/0.25A,RDS(ON)= 0.95@VGS=-1.8V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOT-563 (SC-89-6L) package design
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PIN CONFIGURATION( SOT-563 / SC-89-6L)
PART MARKING
2007/10/31 Ver.1
Page 1

1 Page





SPP102 pdf, ピン配列
SPP1023
Dual P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
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Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±12V
VDS=-20V,VGS=0V
IDSS VDS=-20V,VGS=0V
TJ=55
ID(on) VDS-4.5V,VGS =-5V
RDS(on)
gfs
VGS=-4.5V,ID=-0.45A
VGS=-2.5V,ID=-0.35A
VGS=-1.8V,ID=-0.25A
VDS=-10V,ID=-0.25A
VSD IS=-0.15A,VGS=0V
-20
-0.35
-0.8
±100
-1
-5
V
nA
uA
-0.7 A
0.42 0.52
0.58 0.70
0.75 0.95
0.4 S
-0.8 -1.2 V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS=-10V,VGS=-4.5V ,ID
-0.6A
VDD=-10V,RL=10,
ID-0.4A
VGEN=-4.5V ,RG=6
1.5 2.0
0.3 nC
0.35
5 10
15 25 ns
8 15
1.4 1.8
2007/10/31 Ver.1
Page 3


3Pages


SPP102 電子部品, 半導体
SPP1023
Dual P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
www.DataSheet4U.com
2007/10/31 Ver.1
Page 6

6 Page



ページ 合計 : 8 ページ
 
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共有リンク

Link :


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