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SPP2341 の電気的特性と機能

SPP2341のメーカーはSYNC POWERです、この部品の機能は「P-Channel Enhancement Mode MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 SPP2341
部品説明 P-Channel Enhancement Mode MOSFET
メーカ SYNC POWER
ロゴ SYNC POWER ロゴ 




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SPP2341 Datasheet, SPP2341 PDF,ピン配置, 機能
SPP2341
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP2341 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹ -20V/-3.3 A,RDS(ON)= 45m@VGS=-4.5V
‹ -20V/-2.8 A,RDS(ON)= 55m@VGS=-2.5V
‹ -20V/-2.3 A,RDS(ON)= 65m@VGS=-1.8V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOT-23-3L package design
PIN CONFIGURATION(SOT-23-3L)
www.DataSheet4U.com
PART MARKING
2007/06/25 Ver.2
Page 1

1 Page





SPP2341 pdf, ピン配列
SPP2341
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
wwwI.nDpatuatSCheaept4aUc.ictoamnce
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±12V
VDS=-20V,VGS=0V
IDSS VDS=-20V,VGS=0V
TJ=55
ID(on) VDS-5V,VGS=-4.5V
RDS(on)
gfs
VSD
VGS=- 4.5V,ID=-3.3A
VGS=- 2.5V,ID=-2.8A
VGS=- 1.8V,ID=-2.3A
VDS=-5.0V,ID=-3.3A
IS=-1.6A,VGS=0V
-20
-0.35
-0.9
±100
-1
-10
V
nA
uA
-6 A
0.036
0.045
0.055
3
-0.8
0.045
0.055
0.065
-1.2
S
V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-6V,VGS=-4.5V
ID-3.3A
VDS=-6V,VGS=0V
f=1MHz
VDD=-6V,RL=6
ID-1.0A,VGEN=-4.5V
RG=6
8 13
1.2 nC
2.2
700
160 pF
120
15 25
35 55 ns
60 90
40 60
2007/06/25 Ver.2
Page 3


3Pages


SPP2341 電子部品, 半導体
SPP2341
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
www.DataSheet4U.com
2007/06/25 Ver.2
Page 6

6 Page



ページ 合計 : 8 ページ
 
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ダウンロード
[ SPP2341 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
SPP2341

P-Channel Enhancement Mode MOSFET

SYNC POWER
SYNC POWER
SPP2345

P-Channel Enhancement Mode MOSFET

SYNC POWER
SYNC POWER


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