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SPP2319 の電気的特性と機能

SPP2319のメーカーはSYNC POWERです、この部品の機能は「P-Channel Enhancement Mode MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 SPP2319
部品説明 P-Channel Enhancement Mode MOSFET
メーカ SYNC POWER
ロゴ SYNC POWER ロゴ 




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SPP2319 Datasheet, SPP2319 PDF,ピン配置, 機能
SPP2319
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP2319 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹ -40V/-3.0A,RDS(ON)= 96m@VGS=- 10V
‹ -40V/-2.8A,RDS(ON)=110m@VGS=-4.5V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOT-23-3L package design
PIN CONFIGURATION ( SOT-23-3L )
www.DataSheet4U.com
PART MARKING
2009/07/15 Ver.1
Page 1

1 Page





SPP2319 pdf, ピン配列
SPP2319
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
wwwR.DeavtaeSrsheeeTt4rUa.ncsofmer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±20V
VDS=-36V,VGS=0V
IDSS VDS=-36V,VGS=0V
TJ=85
ID(on) VDS= -5V,VGS =-4.5V
RDS(on)
VGS=-10V,ID=-3.0A
VGS=-4.5V,ID=-2.8A
gfs VDS=-15V,ID=-3.0A
VSD IS=-1.3A,VGS =0V
-40 V
-0.8 -2.5
±100 nA
-1
-5 uA
-10 A
0.090
0.100
13
0.096
0.110
S
-0.55 -1.0 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-15V,VGS=-10V
ID= -3.0A
VDS=-15V,VGS=0V
f=1MHz
VDD=-15V,RL=15
ID-1.0A,VGEN=-10V
RG=6
9 12
1.5 nC
2.0
500
95 pF
50
8 20
10 20 nS
30 35
15 20
2009/07/15 Ver.1
Page 3


3Pages


SPP2319 電子部品, 半導体
SPP2319
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
www.DataSheet4U.com
2009/07/15 Ver.1
Page 6

6 Page



ページ 合計 : 8 ページ
 
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[ SPP2319 データシート.PDF ]


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共有リンク

Link :


部品番号部品説明メーカ
SPP2311

P-Channel Enhancement Mode MOSFET

SYNC POWER
SYNC POWER
SPP2319

P-Channel Enhancement Mode MOSFET

SYNC POWER
SYNC POWER


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