DataSheet.jp

SPP2305 の電気的特性と機能

SPP2305のメーカーはSYNC POWERです、この部品の機能は「P-Channel Enhancement Mode MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 SPP2305
部品説明 P-Channel Enhancement Mode MOSFET
メーカ SYNC POWER
ロゴ SYNC POWER ロゴ 




このページの下部にプレビューとSPP2305ダウンロード(pdfファイル)リンクがあります。
Total 8 pages

No Preview Available !

SPP2305 Datasheet, SPP2305 PDF,ピン配置, 機能
SPP2305
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP2305 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹ -15V/-3.5A,RDS(ON)= 70m@VGS=-4.5V
‹ -15V/-3.0A,RDS(ON)= 85m@VGS=-2.5V
‹ -15V/-2.0A,RDS(ON)=105m@VGS=-1.8V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOT-23-3L package design
PIN CONFIGURATION(SOT-23-3L)
www.DataSheet4U.com
PART MARKING
2007/03/30 Ver.1
Page 1

1 Page





SPP2305 pdf, ピン配列
SPP2305
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
wwwO.DuattpaSuhteCeta4pUa.ccoimtance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±10V
IDSS
ID(on)
RDS(on)
VDS=-12V,VGS=0V
VDS=-12V,VGS=0V
TJ=55
VDS-5V,VGS=-4.5V
VDS-5V,VGS=-2.5V
VGS=-4.5V,ID=-3.5A
VGS=-2.5V,ID=-3.0A
VGS=-1.8V,ID=-2.0A
gfs VDS=-5V,ID=-3.5A
VSD IS=-1.5A,VGS=0V
-15
-0.35
-4
-2
0.055
0.065
0.085
8.5
-0.8
-0.85
±100
-1
-10
0.70
0.85
0.105
-1.2
V
nA
uA
A
S
V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-6V,VGS=-4.5V
ID-2.8A
VDS=-6V,VGS=0V
f=1MHz
VDD=-6V,RL=6
ID-1.0A,VGEN=-4.5V
RG=6
4.8 8
1.0 nC
1.0
485
85 pF
40
10 16
13 23 ns
18 25
15 20
2007/03/30 Ver.1
Page 3


3Pages


SPP2305 電子部品, 半導体
SPP2305
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
www.DataSheet4U.com
2007/03/30 Ver.1
Page 6

6 Page



ページ 合計 : 8 ページ
 
PDF
ダウンロード
[ SPP2305 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
SPP2301

P-Channel Enhancement Mode MOSFET

ETC
ETC
SPP2301A

P-Channel Enhancement Mode MOSFET

SYNC POWER
SYNC POWER
SPP2301D

P-Channel Enhancement Mode MOSFET

SYNC POWER
SYNC POWER
SPP2301DS23RG

P-Channel Enhancement Mode MOSFET

SYNC POWER
SYNC POWER


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap