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FGA30N120FTD の電気的特性と機能

FGA30N120FTDのメーカーはFairchild Semiconductorです、この部品の機能は「Trench IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 FGA30N120FTD
部品説明 Trench IGBT
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FGA30N120FTD Datasheet, FGA30N120FTD PDF,ピン配置, 機能
April 2013
FGA30N120FTD
1200 V, 30 A Field Stop Trench IGBT
Features
• Field Stop Trench Technology
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.6 V @ IC = 30 A
• High Input Impedance
Applications
• Solar Inverter, UPS, Welder, PFC
General Description
Using advanced field stop trench technology, Fairchild®’s
1200V trench IGBTs offer superior conduction and switching
performances for soft switching applications. The device can
operate in parallel configuration with exceptional avalanche rug-
gedness. This device is designed for induction heating and
microwave oven.
C
GCE
TO-3P
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
©2009 Fairchild Semiconductor Corporation
FGH30N120FTD Rev. C0
1
G
E
Ratings
1200
± 25
60
30
90
30
339
132
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
W
W
oC
oC
oC
Typ.
-
-
Max.
0.38
1.2
Unit
oC/W
oC/W
www.fairchildsemi.com

1 Page





FGA30N120FTD pdf, ピン配列
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM Diode Forward Voltage
IF = 30A
TC = 25oC
TC = 125oC
trr
Irr
Diode Reverse Recovery Time
IF =30A,
Diode Peak Reverse Recovery Current di/dt = 200A/μs
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
Qrr Diode Reverse Recovery Charge
TC = 25oC
TC = 125oC
Min.
-
-
-
-
-
-
-
-
Typ.
1.3
1.3
730
775
43
47
5.9
18.2
Max
1.7
-
-
-
-
-
-
-
Unit
V
ns
A
μC
©2009 Fairchild Semiconductor Corporation
FGH30N120FTD Rev. C0
3
www.fairchildsemi.com


3Pages


FGA30N120FTD 電子部品, 半導体
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
1000
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
tr
100
Figure 14. Turn-off Characteristics vs.
Collector Current
1200
1000
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
tf
td(on)
td(off)
10
10
20 30 40
Collector Current, IC [A]
50
100
10
20 30 40
Collector Current, IC [A]
50
Figure 15. Switching Loss vs. Gate Resistance
10
Eoff
Figure 16. Switching Loss vs. Collector Current
10
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
Eoff
1
Common Emitter
VCC = 600V, VGE = 15V
Eon IC = 30A
TC = 25oC
TC = 125oC
0.1
0 20 40 60 80 100
Gate Resistance, RG [Ω]
1
Eon
0.1
10
20 30 40
Collector Current, IC [A]
50
Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics
100 100
10
Safe Operating Area
VGE = 15V, TC = 125oC
1
1 10
100
1000 2000
Collector-Emitter Voltage, VCE [V]
10
1
0.1
0.0
TJ = 125oC
TJ = 25oC
TC = 25oC
TC = 125oC
0.5 1.0
Forward Voltage, VF [V]
1.5
©2009 Fairchild Semiconductor Corporation
FGH30N120FTD Rev. C0
6
www.fairchildsemi.com

6 Page



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部品番号部品説明メーカ
FGA30N120FTD

Trench IGBT

Fairchild Semiconductor
Fairchild Semiconductor


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