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FFH30US30DN の電気的特性と機能

FFH30US30DNのメーカーはFairchild Semiconductorです、この部品の機能は「300V Stealth Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 FFH30US30DN
部品説明 300V Stealth Diode
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FFH30US30DN Datasheet, FFH30US30DN PDF,ピン配置, 機能
June 2003
FFH30US30DN
30A, 300V Stealth™ Diode
General Description
The FFH30US30DN is a Stealth™ diode optimized for low
loss performance in output rectification. The Stealth™ family
exhibits low reverse recovery current (IRM(REC)), low VF and
soft recovery under typical operating conditions.
This device is intended for use as an output rectification diode
in Telecom power supplies and other power switching
applications. Lower VF and IRM(REC) reduces diode losses.
Formerly developmental type TA49449.
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 0.45
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 50ns
• High Operating Temperature . . . . . . . . . . . . . . . . 175oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
• Avalanche Energy Rating. . . . . . . . . . . . . . . . . . . .20mJ
Applications
• Switch Mode Power Supplies
• Power Factor Correction
• Uninterruptable Power Supplies
• Motor Drives
Welders
Package
JEDEC STYLE 3 LEAD TO-247
ANODE 2
CATHODE
ANODE 1
Symbol
K
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CATHODE
(BOTTOM SIDE
METAL)
A1 A2
Device Maximum Ratings (per leg) TC = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VRRM
VRWM
VR
IF(AV)
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (TC = 160oC)
Total Device Current (Both Legs)
300 V
300 V
300 V
30 A
60 A
IFRM
IFSM
PD
EAVL
TJ, TSTG
TL
TPKG
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
70
325
230
20
-55 to 175
300
260
A
A
W
mJ
°C
°C
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2003 Fairchild Semiconductor Corporation
FFH30US30DN Rev. A1

1 Page





FFH30US30DN pdf, ピン配列
Typical Performance Curves (per leg)
60
50
175oC
40
125oC
30
75oC
20
25oC
10
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Current vs Forward Voltage
1000
100
10
1
175oC
150oC
125oC
100oC
75oC
0.1
0.01
50
25oC
100 150 200 250
VR, REVERSE VOLTAGE (V)
300
Figure 2. Reverse Current vs Reverse Voltage
60
VR = 195V, TC = 125oC
50
40
30 tb at dIF/dt = 200A/µs, 500A/µs, 800A/µs
20
10
ta at dIF/dt = 200A/µs, 500A/µs, 800A/µs
0
0 10 20 30 40 50 60
IF , FORWARD CURRENT (A)
Figure 3.
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ta and tb Curves vs Forward Current
35
VR = 195V, TC = 125oC
30
25
dIF/dt = 800A/µs
20
15 dIF/dt = 500A/µs
10
5 dIF/dt = 200A/µs
0
0 10 20 30 40 50 60
IF, FORWARD CURRENT (A)
Figure 5. Maximum Reverse Recovery Current vs
Forward Current
70
VR = 195V, TC = 125oC
60
50
tb at IF = 60A, 30A, 15A
40
30
ta at IF = 60A, 30A, 15A
20
10
0
0 200 400 600 800 1000
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. ta and tb Curves vs dIF/dt
1200
40
VR = 195V, TC = 125oC
35
30
25
IF = 60A
20
IF = 30A
15
IF = 15A
10
5
200
400
600
800
1000
1200
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 6. Maximum Reverse Recovery Current vs
dIF/dt
©2003 Fairchild Semiconductor Corporation
FFH30US30DN Rev. A1


3Pages


FFH30US30DN 電子部品, 半導体
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ImpliedDisconnect™ PACMAN™
SPM™
ActiveArray™ FACT Quiet Series™ ISOPLANAR™
POP™
Stealth™
Bottomless™ FASTâ
LittleFET™
Power247™
SuperSOT™-3
CoolFET™
FASTr™
MicroFET™
PowerTrenchâ
SuperSOT™-6
CROSSVOLT™ FRFET™
MicroPak™
QFET™
SuperSOT™-8
DOME™
GlobalOptoisolator™ MICROWIRE™
QS™
SyncFET™
EcoSPARK™ GTO™
MSX™
QT Optoelectronics™ TinyLogicâ
E2CMOSTM
HiSeC™
MSXPro™
Quiet Series™
TruTranslation™
EnSignaTM
I2
OCX™
Across the board. Around the world.™ OCXPro™
The Power Franchise™
OPTOLOGICâ
RapidConfigure™ UHC™
RapidConnect™
UltraFETâ
SILENT SWITCHERâ VCX™
Programmable Active Droop™
OPTOPLANAR™ SMART START™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTENAPPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
effectiveness.
user.
PRODUCT STATUS DEFINITIONS
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I2

6 Page



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部品番号部品説明メーカ
FFH30US30DN

300V Stealth Diode

Fairchild Semiconductor
Fairchild Semiconductor


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