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FDP8442 の電気的特性と機能

FDP8442のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDP8442
部品説明 N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDP8442 Datasheet, FDP8442 PDF,ピン配置, 機能
www.DataSheet4U.com
June 2007
FDP8442
N-Channel PowerTrench® MOSFET
40V, 80A, 3.1m
Features
„ Typ rDS(on) = 2.3mat VGS = 10V, ID = 80A
„ Typ Qg(10) = 181nC at VGS = 10V
„ Low Miller Charge
Applications
„ Automotive Engine Control
„ Powertrain Management
„ Solenoid and Motor Drivers
„ Low Qrr Body Diode
„ UIS Capability (Single Pulse and Repetitive Pulse)
„ Electronic Steering
„ Integrated Starter / Alternator
„ Qualified to AEC Q101
„ Distributed Power Architectures and VRMs
„ RoHS Compliant
„ Primary Switch for 12V Systems
AD FREE I
©2007 Fairchild Semiconductor Corporation
FDP8842 Rev. A
1
www.fairchildsemi.com

1 Page





FDP8442 pdf, ピン配列
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Switching Characteristics
t(on)
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
VDD = 20V, ID = 80A
VGS = 10V, RGS = 2
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ISD = 80A
ISD = 40A
IF = 75A, di/dt = 100A/µs
IF = 75A, di/dt = 100A/µs
Notes:
1: Starting TJ = 25oC, L = 0.35mH, IAS = 64A
2: Pulse width = 100s.
Min Typ Max Units
- - 62 ns
- 19.5 -
ns
- 19.3 -
ns
- 57 - ns
- 17.2 -
ns
- - 118 ns
-
0.9 1.25
V
- 0.8 1.0 V
- 49 64 ns
- 70 91 nC
www.DataSheet4U.com
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDP8842 Rev. A
3 www.fairchildsemi.com


3Pages


FDP8442 電子部品, 半導体
Typical Characteristics
1.2
VGS = VDS
1.1 ID = 250µA
1.0
0.9
0.8
0.7
0.6
0.5
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
1.10
ID = 250µA
1.05
1.00
0.95
0.90
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
40000
10000
Ciss
Coss
1000
Crss
f = 1MHz
VGS = 0V
100
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
50
www.DataSheet4U.coFmigure 13. Capacitance vs Drain to Source
Voltage
10
ID = 80A
8
6
4
VDD = 15V
VDD = 20V
VDD = 25V
2
0
0 50 100 150 200
Qg, GATE CHARGE(nC)
Figure 14. Gate Charge vs Gate to Source Voltage
FDP8842 Rev. A
6 www.fairchildsemi.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FDP8440

N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
FDP8441

N-Channel PowerTrench MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
FDP8442

N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
FDP8442_F085

MOSFET ( Transistor )

Fairchild Semiconductor
Fairchild Semiconductor


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