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FDP8440 の電気的特性と機能

FDP8440のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDP8440
部品説明 N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDP8440 Datasheet, FDP8440 PDF,ピン配置, 機能
January 2009
FDP8440
N-Channel PowerTrench® MOSFET
40V, 277A, 2.2mΩ
Features
• RDS(on) = 1.64mΩ (Typ.)@ VGS = 10V, ID = 80A
• Qg(tot) = 345nC (Typ.)@ VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• RoHS Compliant
Application
• Automotive Engine Control
• Powertrain Management
• Motors, Solenoids
• Electronic Steering
• Integrated Starter/ Alternator
• Distributed Power Architectures and VRMs
• Primary Switch for 12V Systems
tm
D
GDS
TO-220
FDP Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
www.DataSheSeyt4mU.bcooml
VDSS
VGSS
ID
IDM
EAS
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-
-
-
Continuous
Continuous
Continuous
(TC
(TC
(TC
=
=
=
25oC, Silicon Limited)
100oC, Silicon Limited)
25oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 2)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 100A.
Thermal Characteristics
Ratings
40
±20
277*
196*
100
500
1682
306
2.04
-55 to +175
300
RθJC
RθCS
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink (Typ.)
Thermal Resistance, Junction to Ambient
0.49
0.5
62.5
Units
V
V
A
A
mJ
W
W/oC
oC
oC
oC/W
oC/W
oC/W
©2009 Fairchild Semiconductor Corporation
FDP8440 Rev. A6
1
www.fairchildsemi.com

1 Page





FDP8440 pdf, ピン配列
Typical Performance Characteristics
Figure 1. On-Region Characteristics
400
100
VGS = 10.0 V
7.0 V
10
5.0 V
3.5 V
3.0 V
2.5 V
1
0.4
0.04
* Notes :
1. 250μs Pulse Test
2. TC = 25oC
0.1
VDS,Drain-Source Voltage[V]
1
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.80
Figure 2. Transfer Characteristics
400
100
150oC
-55oC
10 25oC
* Notes :
1. VDS = 20V
2. 250μs Pulse Test
1
0246
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
1000
1.76
VGS = 4.5V
1.72
VGS = 10V
www.DataSheet14.U68.com
0
* Note : TJ = 25oC
50 100 150 200
ID, Drain Current [A]
250
Figure 5. Capacitance Characteristics
30000
24000
18000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
12000
6000
0
10-1
Coss
* Note:
1. VGS = 0V
2. f = 1MHz
Crss
100 101
VDS, Drain-Source Voltage [V]
20
100 150oC
25oC
10
Notes:
1. VGS = 0V
2. 250μs Pulse Test
1
0.3 0.6 0.9 1.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 25V
VDS = 20V
8 VDS = 15V
6
4
2
0 * Note : ID = 80A
0 100 200 300 400
Qg, Total Gate Charge [nC]
FDP8440 Rev. A6
3 www.fairchildsemi.com


3Pages


FDP8440 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.DataSheet4U.com
FDP8440 Rev. A6
6 www.fairchildsemi.com

6 Page



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共有リンク

Link :


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