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ST3407 の電気的特性と機能

ST3407のメーカーはStanson Technologyです、この部品の機能は「P Channel Enhancement Mode MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 ST3407
部品説明 P Channel Enhancement Mode MOSFET
メーカ Stanson Technology
ロゴ Stanson Technology ロゴ 




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ST3407 Datasheet, ST3407 PDF,ピン配置, 機能
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ST3407
P Channel Enhancement Mode MOSFET
-3.6A
DESCRIPTION
ST3407 is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
3
D
G
1
S
2
FEATURE
-30V/-4.0A, RDS(ON) = 60mΩ
@VGS = -10V
-30V/-3.2A, RDS(ON) = 80mΩ
@VGS = -4.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and
maximum DC current capability
SOT-23-3L package design
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23-3L
3
A7YA
12
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST3407S23RG
SOT-23-3L
A7YA
Process Code : A ~ Z ; a ~ z
ST3407S23RG S 23: SOT-23-3L ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST3407 2006. V1

1 Page





ST3407 pdf, ピン配列
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ST3407
P Channel Enhancement Mode MOSFET
-3.6A
ELECTRICAL CHARACTERISTICS ( Ta = 25Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
V(BR)DSS VGS=0V,ID=-250uA -30
V
VGS(th) VDS=VGS,ID=-250uA -1.0
-3.0 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
VDS=0V,VGS=±20V
VDS=-24V,VGS=0V
VDS=-24V,VGS=0V
TJ=55
VDS≦-5V,VGS=-10V
VGS=-10.0V,ID=-4.0A
VGS=-4.5V,ID=-3.2A
VDS=-5.0V,ID=-4.0A
-10
±100
-1
-9.5
45 60
60 80
10
nA
uA
A
mΩ
S
VSD IS=-1.0A,VGS=0V
-0.8 -1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-15V
VGS=-10V
ID-4.0A
VDS=-15V
VGS=0V
F=1MHz
VDD=-15V
RL=15Ω
ID=-1.0A
VGEN=-10V
RG=6Ω
14 21
1.9
3.7
540
131
105
10 16
16 25
32 50
21 32
nC
pF
nS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST3407 2006. V1


3Pages


ST3407 電子部品, 半導体
www.DataSheet4U.com
SOT-23-3L PACKAGE OUTLINE
ST3407
P Channel Enhancement Mode MOSFET
-3.6A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST3407 2006. V1

6 Page



ページ 合計 : 6 ページ
 
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共有リンク

Link :


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