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ST2305A の電気的特性と機能

ST2305AのメーカーはStanson Technologyです、この部品の機能は「P Channel Enhancement Mode MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 ST2305A
部品説明 P Channel Enhancement Mode MOSFET
メーカ Stanson Technology
ロゴ Stanson Technology ロゴ 




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ST2305A Datasheet, ST2305A PDF,ピン配置, 機能
ST2305A
P Channel Enhancement Mode MOSFET
-3.5A
DESCRIPTION
ST2305A is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
3
D
GS
12
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23-3L
FEATURE
z -15V/-3.5A, RDS(ON) = 45m-ohm (Typ.)
@VGS = -4.5V
z -15V/-3.0A, RDS(ON) = 55m-ohm
@VGS = -2.5V
z -15V/-2.0A, RDS(ON)= 90m-ohm
@VGS=-1.8V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23-3L package design
www.DataSheet4U.com
3
05YA
12
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST2305AS23RG
SOT-23-3L
05YA
Process Code : A ~ Z ; a ~ z
ST2305AS23RG S : SOT-23-3L ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2305A 2005. V1

1 Page





ST2305A pdf, ピン配列
ST2305A
P Channel Enhancement Mode MOSFET
-3.5A
ELECTRICAL CHARACTERISTICS ( Ta = 25Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
V(BR)DSS VGS=0V,ID=-250uA -15
V
VGS(th) VDS=VGS,ID=-250uA -0.3
-1.5 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
VDS=0V,VGS=±12V
VDS=-20V,VGS=0V
VDS=-20V,VGS=0V
TJ=55
VDS-5V,VGS=-4.5V
VDS-5V,VGS=-2.5V
VGS=-4.5V,ID=-3.5A
VGS=-2.5V,ID=-2.0A
VGS=-1.8V,ID=-2.0A
VDS=-5V,ID=-3.5V
±100 nA
-1
-10 uA
-6
-3
0.045
0.055
0.09
8.5
A
Ω
S
Diode Forward Voltage
www.DataSheDet4yUn.caommic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
VSD IS=-1.6A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-10V
VGS=-4.5V
ID-3.5A
VDS=-10V
VGS=0V
F=1MHz
VDD=-10V
RL=6Ω
ID=-1.0A
VGEN=-4.5V
RG=6Ω
-0.8 -1.2 V
10 12
2
2
485
90
40
10 18
13 22
18 24
15 20
nC
pF
nS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2305A 2005. V1


3Pages


ST2305A 電子部品, 半導体
SOT-23-3L PACKAGE OUTLINE
ST2305A
P Channel Enhancement Mode MOSFET
-3.5A
www.DataSheet4U.com
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2305A 2005. V1

6 Page



ページ 合計 : 6 ページ
 
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共有リンク

Link :


部品番号部品説明メーカ
ST2305

P Channel Enchancement Mode MOSFET

Stanson Technology
Stanson Technology
ST2305A

P Channel Enhancement Mode MOSFET

Stanson Technology
Stanson Technology


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