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ST2301A の電気的特性と機能

ST2301AのメーカーはStanson Technologyです、この部品の機能は「P Channel Enhancement Mode MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 ST2301A
部品説明 P Channel Enhancement Mode MOSFET
メーカ Stanson Technology
ロゴ Stanson Technology ロゴ 




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ST2301A Datasheet, ST2301A PDF,ピン配置, 機能
ST2301A
P Channel Enhancement Mode MOSFET
-3.0A
DESCRIPTION
ST2301A is the P-Channel logic enhancement mode power field effect transistor which is
produced using high cell density, DMOS trench technology.This high density process is
especially tailored to minimize on-state resistance.These devices are particularly suited for
low voltage application such as cellular phone and notebook computer power management,
other battery powered circuits, and low in-line power loss are required. The product is in
a very small outline surface mount package.
PIN CONFIGURATION
SOT-23
3
D
GS
12
FEATURE
z -20V/-2.8A, RDS(ON) = 80mΩ (Typ.)
@VGS = -4.5V
z -20V/-2.0A, RDS(ON) = 120mΩ
@VGS = -2.5V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23 package design
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23
www.DataSheet4U.com
3
S01YA
12
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
ST2301SRG
SOT-23
Process Code A ~ Z ; a ~ z
ST2301SRG S : SOT23 R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Part Marking
S01YA
ST2301A 2005. V1

1 Page





ST2301A pdf, ピン配列
ST2301A
P Channel Enhancement Mode MOSFET
-3.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
V(BR)DSS
VGS(th)
IGSS
IDSS
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
www.DataSGheaette4U-S.coomurce Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
ID(on)
RDS(on)
gfs
VSD
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
Turn-Off Time
td(off)
tf
VGS=0V,ID=-250uA -20
V
VDS=VGS,ID=-250uA -0.45
-1.5 V
VDS=0V,VGS=±12V
VDS=-20V,VGS=0V
VDS=-20V,VGS=0V
TJ=55
VDS-5V,VGS=-4.5V
VDS-5V,VGS=-2.5V
VGS=-2.5V,ID=-2.0A
VGS=-4.5V,ID=-2.8A
VDS=-5V,ID=-2.8V
±100 nA
-1
-10 uA
-6
-3
0.080
0.120
6.5
A
Ω
S
IS=-1.6A,VGS=0V
-0.8 -1.2 V
VDS=-6V
VGS=-4.5V
ID-2.8A
VDS=-6V
VGS=0V
F=1MHz
VDD=-6V
RL=6Ω
ID=-1A
VGEN=-4.5V
RG=6Ω
5.8 10
0.85
1.7
nC
415
223
pF
87
13 25
36 60 nS
42 70
34 60
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2301A 2005. V1


3Pages


ST2301A 電子部品, 半導体
SOT-23 PACKAGE OUTLINE
ST2301A
P Channel Enhancement Mode MOSFET
-3.0A
www.DataSheet4U.com
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2301A 2005. V1

6 Page



ページ 合計 : 6 ページ
 
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共有リンク

Link :


部品番号部品説明メーカ
ST2301

P Channel Enchancement Mode MOSFET

Stanson Technology
Stanson Technology
ST2301A

P Channel Enhancement Mode MOSFET

Stanson Technology
Stanson Technology


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