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FDMS7692 の電気的特性と機能

FDMS7692のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDMS7692
部品説明 N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDMS7692 Datasheet, FDMS7692 PDF,ピン配置, 機能
August 2011
FDMS7692
N-Channel PowerTrench® MOSFET
30 V, 7.5 mΩ
Features
„ Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 13 A
„ Max rDS(on) = 13 mΩ at VGS = 4.5 V, ID = 10 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ Next generation enhanced body diode technology, engineered
for soft recovery.
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
„ IMVP Vcore Switching for Notebook
„ VRM Vcore Switching for Desktop and Server
„ OringFET / Load Switch
„ DC-DC Conversion
Top Bottom
Pin 1
S
S
S
G
D
D
D
D
Power 56
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
28
47
14
50
21
27
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
4.6
50
°C/W
Device Marking
FDMS7692
Device
FDMS7692
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMS7692 Rev.D1
1
www.fairchildsemi.com

1 Page





FDMS7692 pdf, ピン配列
Typical Characteristics TJ = 25 °C unless otherwise noted
50
40 VGS = 10 V
VGS = 4.5 V
VGS = 4.0 V
30 VGS = 3.5 V
20
10
0
0.0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3.0 V
0.5 1.0 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
2.0
Figure 1. On Region Characteristics
10
8 VGS = 3.0 V
6
4
2
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3.5 V
VGS = 4.0 V
0
VGS = 4. 5 V
VGS = 10 V
0 10 20 30 40 50
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
1.5 ID = 13 A
VGS = 10 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
30
ID = 13 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
25
20
15
10
5
2
TJ = 125 oC
TJ = 25 oC
468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
50
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
40
VDS = 5 V
30
20
10
0
1
TJ = 150 oC
TJ = 25 oC
TJ = -55 oC
234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
5
100
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.2
0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDMS7692 Rev.D1
3
www.fairchildsemi.com


3Pages


FDMS7692 電子部品, 半導体
Dimensional Outline and Pad Layout
©2011 Fairchild Semiconductor Corporation
FDMS7692 Rev.D1
6
www.fairchildsemi.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FDMS7692

N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
FDMS7692A

N-Channel MOSFET

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FDMS7694

MOSFET ( Transistor )

Fairchild Semiconductor
Fairchild Semiconductor
FDMS7698

N-Channel PowerTrench MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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