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FDMS7672AS の電気的特性と機能

FDMS7672ASのメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDMS7672AS
部品説明 N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDMS7672AS Datasheet, FDMS7672AS PDF,ピン配置, 機能
September 2009
FDMS7672AS
N-Channel PowerTrench® SyncFETTM
30 V, 42 A, 4 m
Features
General Description
„ Max rDS(on) = 4.0 mat VGS = 10 V, ID = 18 A
„ Max rDS(on) = 4.5 mat VGS = 7 V, ID = 16 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ SyncFET Schottky Body Diode
„ MSL1 robust package design
The FDMS7672AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
„ 100% UIL tested
„ Synchronous Rectifier for DC/DC Converters
„ RoHS Compliant
„ Notebook Vcore/ GPU low side switch
„ Networking Point of Load low side switch
„ Telecom secondary side rectification
Top
Bottom
Pin 1
S D5
4G
S
SG D 6
3S
Power 56
DDDD
D7
D8
2S
1S
MOSFET
www.DataSheet4U.com
Maximum
Ratings
TA
=
25
°C
unless
otherwise
noted
Symbol
VDS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
dv/dt
MOSFET dv/dt
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
42
83
19
90
2.6
60
46
2.5
-55 to +150
Units
V
V
A
V/ns
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
2.7
50
°C/W
Device Marking
FDMS7672AS
Device
FDMS7672AS
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMS7672AS Rev.C
1
www.fairchildsemi.com

1 Page





FDMS7672AS pdf, ピン配列
Typical Characteristics TJ = 25 °C unless otherwise noted
90
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
60 VGS = 10 V
VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
30
VGS = 3 V
0
0.0 0.5 1.0 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
2.0
12
VGS = 3 V
10
8
VGS = 3.5 V
6
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
4 VGS = 10 V
VGS = 4 V VGS = 4.5 V
2
0
0 30 60
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
90
1.5
1.4
ID = 18 A
VGS = 10 V
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
www.DataSheet4U.com
90
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
60 VDS = 5 V
TJ = 125 oC
30
0
1
TJ = 25 oC
TJ = -55 oC
23
VGS, GATE TO SOURCE VOLTAGE (V)
4
Figure 5. Transfer Characteristics
12
ID = 18 A
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
10
8
6
TJ = 125 oC
4
2 TJ = 25 oC
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
100
VGS = 0 V
10
TJ = 125 oC
1
10
0.1 TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
FDMS7672AS Rev.C
3 www.fairchildsemi.com


3Pages


FDMS7672AS 電子部品, 半導体
Typical Characteristics (continued)
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MoSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS7672AS.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
20
15
di/dt = 300 A/µs
10
5
0
-5
0 30 60 90 120 150
TIME (ns)
Figure 14. FDMS7672AS SyncFET body
diode reverse recovery characteristic
10-2
TJ = 125 oC
10-3 TJ = 100 oC
10-4
TJ = 25 oC
10-5
10-6
0
5 10 15 20 25
VDS, REVERSE VOLTAGE (V)
30
Figure 15. SyncFET body diode reverses
leakage versus drain-source voltage
www.DataSheet4U.com
FDMS7672AS Rev.C
6 www.fairchildsemi.com

6 Page



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部品番号部品説明メーカ
FDMS7672AS

N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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