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FDD6776A の電気的特性と機能

FDD6776AのメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDD6776A
部品説明 N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDD6776A Datasheet, FDD6776A PDF,ピン配置, 機能
January 2009
FDD6776A / FDU6776A_F071
N-Channel PowerTrench® MOSFET
25 V, 7.5 m
Features
General Description
„ Max rDS(on) = 7.5 mat VGS = 10 V, ID = 17.7 A
„ Max rDS(on) = 17.0mat VGS = 4.5 V, ID = 13.2 A
„ 100% UIL test
„ RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low rDS(on) and fast
switching speed.
Applications
„ Vcore DC-DC for Desktop Computers and Servers
„ VRM for Intermediate Bus Architecture
D
G
S
D-PAK
(TO-252)
D
G
G
D
S
Short-Lead I-PAK
(TO-251AA)
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
www.DataSheet4SUy.mcobmol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
±20
30
54
17.7
100
32
39
3.7
-55 to +175
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.8
40
°C/W
Device Marking
FDD6776A
FDU6776A
Device
FDD6776A
FDU6776A_F071
Package
D-PAK (TO-252)
TO-251AA
Reel Size
13 ’’
N/A(Tube)
Tape Width
12 mm
N/A
Quantity
2500 units
75 units
©2009 Fairchild Semiconductor Corporation
FDD6776A / FDU6776A_F071 Rev.C
1
www.fairchildsemi.com

1 Page





FDD6776A pdf, ピン配列
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 40 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 96 °C/W when mounted
on a minimum pad.
2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3: EAS of 32 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 8 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 19 A.
www.DataSheet4U.com
©2009 Fairchild Semiconductor Corporation
FDD6776A / FDU6776A_F071 Rev.C
3
www.fairchildsemi.com


3Pages


FDD6776A 電子部品, 半導体
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
0.001
10-5
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJC = 3.8 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-4 10-3 10-2
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
10-1
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
0.001
10-4
www.DataSheet4U.com
SINGLE PULSE
RθJA = 96 oC/W
t1
t2
OTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Transient Thermal Response Curve
100
1
1000
©2009 Fairchild Semiconductor Corporation
FDD6776A / FDU6776A_F071 Rev.C
6
www.fairchildsemi.com

6 Page



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部品番号部品説明メーカ
FDD6776A

N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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