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FDB031N08 の電気的特性と機能

FDB031N08のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDB031N08
部品説明 N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDB031N08 Datasheet, FDB031N08 PDF,ピン配置, 機能
July 2008
FDB031N08
N-Channel PowerTrench® MOSFET
75V, 235A, 3.1m
tm
Features
• RDS(on) = 2.4m( Typ.)@ VGS = 10V, ID = 75A
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low RDS(on)
• High power and current handling capability
• RoHS compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s adcanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
D
D
D2-PAK
G S FDB Series
G
S
www.DatMaSOheSet4FUE.cTomMaximum Ratings TC = 25oC unless otherwise noted*
Symbol
Parameter
FDB031N08
VDSS
VGSS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-
-
-
Continuous (TC = 25oC, Silicon Limited)
Continuous (TC = 100oC, Silicon Limited)
Continuous (TC = 25oC, Package Limited)
75
±20
235*
165*
120
IDM
EAS
dv/dt
PD
Drain Current
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 3)
940
1995
5.5
375
2.5
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
0.4
62.5
Units
V
V
A
A
A
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2008 Fairchild Semiconductor Corporation
FDB031N08 Rev. A3
1
www.fairchildsemi.com

1 Page





FDB031N08 pdf, ピン配列
Typical Performance Characteristics
Figure 1. On-Region Characteristics
3000
1000
100
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
10
1
0.1
0.01
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
0.1
VDS,Drain-Source Voltage[V]
1
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.0030
0.0025
VGS = 10V
VGS = 20V
www.DataSheet4U.com
0.0020
0
*Note: TC = 25oC
100 200 300
ID, Drain Current [A]
400
Figure 5. Capacitance Characteristics
100000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10000
1000
Ciss
Coss
Crss
*Note:
1. VGS = 0V
2. f = 1MHz
100
0.1
1 10
VDS, Drain-Source Voltage [V]
80
FDB031N08 Rev. A3
Figure 2. Transfer Characteristics
500
100
175oC
-55oC
25oC
10
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
1
2468
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
400
100
175oC
25oC
10
*Notes:
1. VGS = 0V
2. 250µs Pulse Test
1
0.0 0.5 1.0 1.5
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 15V
VDS = 37.5V
8 VDS = 60V
6
4
2
*Note: ID = 75A
0
0 50 100 150 200
Qg, Total Gate Charge [nC]
3 www.fairchildsemi.com


3Pages


FDB031N08 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
www.DataSheet4U.com
I SD
( DUT )
VDS
( DUT )
D
=
--G--a--t-e---P--u-l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
FDB031N08 Rev. A3
6 www.fairchildsemi.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FDB031N08

N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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