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FDA24N40F の電気的特性と機能

FDA24N40FのメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDA24N40F
部品説明 N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDA24N40F Datasheet, FDA24N40F PDF,ピン配置, 機能
FDA24N40F
N-Channel MOSFET, FRFET
400V, 23A, 0.19
Features
• RDS(on) = 0.15( Typ.)@ VGS = 10V, ID = 11.5A
• Low gate charge (Typ. 46nC)
• Low Crss (Typ.25pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt apability
• RoHS compliant
December 2007
UniFETTM
tm
Descripition
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G DS
TO-3PN
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
G
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
Ratings
400
±30
23
13.8
92
1190
23
23.5
4.5
235
1.8
-55 to +150
300
Min.
-
0.24
-
Max.
0.53
-
40
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2007 Fairchild Semiconductor Corporation
FDA24N40F Rev. A
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

1 Page





FDA24N40F pdf, ピン配列
Typical Performance Characteristics
Figure 1. On-Region Characteristics
70 VGS = 15.0V
10.0V
8.0 V
7.0 V
10 6.5 V
6.0 V
5.5 V
1
0.1
0.02
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
0.1 1
VDS,Drain-Source Voltage[V]
10 15
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.36
0.32
0.28
0.24
0.20
VGS = 10V
VGS = 20V
0.16
0.12
0
*Note: TJ = 25oC
20 40 60
ID, Drain Current [A]
80
Figure 5. Capacitance Characteristics
5000
4000
3000
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz
2000
1000
0
0.1
Crss
1 10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
100
10 150oC
25oC
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
1
45678
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
200
100
150oC
25oC
10
*Notes:
1. VGS = 0V
2. 250µs Pulse Test
1
0.0 0.4 0.8 1.2 1.6
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 100V
8
VDS = 200V
VDS = 320V
6
4
2
*Note: ID = 23A
0
0 10 20 30 40 50
Qg, Total Gate Charge [nC]
FDA24N40F Rev. A
3 www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/


3Pages


FDA24N40F 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
D riv e r
RG
V GS
+
V DS
_
L
Sam e Type
as DUT
• d v /d t c o n tro lle d b y R G
• IS D c o n tro lle d b y p u ls e p e rio d
V DD
V GS
( D riv e r )
I SD
(DUT )
V DS
(DUT )
D = - -GG- -aa- -tt-ee- - P-P- u-u-ll-ss- ee- - -WP- -e-i-dr -i to-h-d-
10V
IFM , B o d y D io d e F o rw a rd C u rre n t
d i/d t
IR M
B o d y D io d e R e v e rs e C u rre n t
B o d y D io d e R e c o v e ry d v /d t
V SD
B o d y D io d e
F o rw a rd V o lta g e D ro p
V DD
FDA24N40F Rev. A
6 www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FDA24N40F

N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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