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IGW75N60T の電気的特性と機能

IGW75N60TのメーカーはInfineon Technologiesです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IGW75N60T
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ Infineon Technologies
ロゴ Infineon Technologies ロゴ 




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IGW75N60T Datasheet, IGW75N60T PDF,ピン配置, 機能
IGW75N60T
TRENCHSTOPSeries
q
Low Loss IGBT: IGBT in TRENCHSTOPand Fieldstop technology
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TRENCHSTOPand Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO247-3
Type
IGW75N60T
VCE
600V
IC
75A
VCE(sat),Tj=25°C
1.5V
Tj,max
175C
Marking
G75T60
Package
PG-TO247-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ≥ 25C
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area VCE = 600V, Tj = 175C, tp = 1µs
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
-
Value
600
150
75
225
225
20
5
428
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.6 20.09.2013

1 Page





IGW75N60T pdf, ピン配列
IGW75N60T
TRENCHSTOPSeries
q
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy1)
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25C,
VCC=400V,IC=75A,
VGE=0/15V,
rG=5, L=100nH,
C=39pF
L, Cfrom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Diode from IKW75N60T
min.
-
-
-
-
-
-
-
Value
Typ.
33
36
330
35
2.0
2.5
4.5
Unit
max.
- ns
-
-
-
- mJ
-
-
Switching Characteristic, Inductive Load, at Tj=175 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy1)
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=175C,
VCC=400V,IC=75A,
VGE=0/15V,
rG=5, L=100nH,
C=39pF
L, Cfrom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Diode from IKW75N60T
min.
-
-
-
-
-
-
-
Value
Typ.
32
37
363
38
2.9
2.9
5.8
Unit
max.
- ns
-
-
-
- mJ
-
-
IFAG IPC TD VLS
3
Rev. 2.6 20.09.2013


3Pages


IGW75N60T 電子部品, 半導体
IGW75N60T
TRENCHSTOPSeries
q
t d(off)
100ns
tf
td(on)
10ns
0A
tr
40A
80A
120A
Figure 9.
IC, COLLECTOR CURRENT
Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, rG = 5Ω,
Dynamic test circuit in Figure E)
td(off)
100ns
t
f
tr
td(on)
10ns

 
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 75A,
Dynamic test circuit in Figure E)
td(off)
100ns
tf
tr
td(on)
25°C 50°C 75°C 100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 75A, rG=5Ω,
Dynamic test circuit in Figure E)
7V
6V
max.
typ.
5V
4V min.
3V
2V
1V
0V
-50°C
0°C
50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 1.2mA)
IFAG IPC TD VLS
6
Rev. 2.6 20.09.2013

6 Page



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共有リンク

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部品番号部品説明メーカ
IGW75N60H3

IGBT ( Insulated Gate Bipolar Transistor )

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IGW75N60T

IGBT ( Insulated Gate Bipolar Transistor )

Infineon Technologies
Infineon Technologies


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