DataSheet.jp

IGW40T120 の電気的特性と機能

IGW40T120のメーカーはInfineon Technologiesです、この部品の機能は「Low Loss IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 IGW40T120
部品説明 Low Loss IGBT
メーカ Infineon Technologies
ロゴ Infineon Technologies ロゴ 




このページの下部にプレビューとIGW40T120ダウンロード(pdfファイル)リンクがあります。

Total 13 pages

No Preview Available !

IGW40T120 Datasheet, IGW40T120 PDF,ピン配置, 機能
TrenchStop® Series
IGW40T120
Low Loss IGBT in TrenchStop® and Fieldstop technology
C
Short circuit withstand time – 10s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
G
E
PG-TO-247-3
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IGW40T120 1200V 40A
1.7V
150C G40T120
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150C
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 1200V, Tj 150C
Power dissipation
TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
-
Package
PG-TO-247-3
Value
1200
75
40
105
105
20
10
270
-40...+150
-55...+150
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.4 Nov. 09

1 Page





IGW40T120 pdf, ピン配列
TrenchStop® Series
IGW40T120
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=40A
VGE=15V
VGE=15V,tSC10s
VCC = 600V,
Tj = 25C
-
-
-
-
-
-
2500
130
110
203
13
210
- pF
-
-
- nC
- nH
-A
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25C,
VCC=600V,IC=40A,
VGE=0/15V,
RG=15,
L2)=180nH,
C2)=39pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
48
34
480
70
3.3
3.2
6.5
Unit
max.
- ns
-
-
-
- mJ
-
-
Switching Characteristic, Inductive Load, at Tj=150 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=150C
VCC=600V,IC=40A,
VGE=0/15V,
RG= 15,
L2)=180nH,
C2)=39pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
52
40
580
120
5.0
5.4
10.4
Unit
max.
- ns
-
-
-
- mJ
-
-
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
Power Semiconductors
3
Rev. 2.4 Nov. 09


3Pages


IGW40T120 電子部品, 半導体
TrenchStop® Series
IGW40T120
td(off)
100ns tf
td(on)
10ns tr
1000 ns
td(off)
tf
100 ns
td(on)
tr
10 ns
1ns
0A
20A 40A 60A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=15Ω,
Dynamic test circuit in Figure E)
1 ns
    
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, IC=40A,
Dynamic test circuit in Figure E)
td(off)
100ns
tf
td(on)
tr
10ns
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=40A, RG=15Ω,
Dynamic test circuit in Figure E)
7V
6V
5V max.
typ.
4V
min.
3V
2V
1V
0V
-50°C 0°C 50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 1.5mA)
Power Semiconductors
6
Rev. 2.4 Nov. 09

6 Page



ページ 合計 : 13 ページ
 
PDF
ダウンロード
[ IGW40T120 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IGW40T120

Low Loss IGBT

Infineon Technologies
Infineon Technologies


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap