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PDF ISA2191AT2 Data sheet ( Hoja de datos )
| Número de pieza | ISA2191AT2 | |
| Descripción | Transistor | |
| Fabricantes | Isahaya Electronics | |
| Logotipo |  |
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〈Transistor〉
ISA2191AT2
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
ISA2191AT2 is a super mini package resin sealed silicon PNP epitaxial
transistor,It is designed for low frequency application.
Since it is a super-thin flat lead type package,a high-density
mounting are possible.
OUTLINE DRAWING
1.21±0.1
0.79±0.1
Unit：ｍｍ
FEATURE
●Super-thin flat lead type package. t=0. 5mm
●Excellent linearly of DC forward current gain.
●Low collector to emitter saturation voltage
VCE(sat)=-0.3V max (@Ic=-100mA/IB=-10mA)
①
②③
APPLICATION
For hybrid IC,small type machine low frequency voltage amplify
application
MAXIMUM RATINGS(Ta=25℃)
Symbol
Parameter
Ratings Unit
VCBO
VEBO
VCEO
IC
PC
Tj
Tstg
Collector to Base voltage
-60 V
Emitter to Base voltage
-6 V
Collector to Emitter voltage
-50
V
Collector current
Collector dissipation
Junction temperature
-150
125（※）
125
mA
mW
℃
Storage temperature
-55～125 ℃
※package mounted on 9×19×1mm glass-epoxy substrate.
JEITA：─
ISAHAYA：T-USM
TERMINAL CONNECTER
①：BASE
②：EMITTER
③：COLLECTOR
MARKING
Abbreviation for Kind
hFE Item
７Ｆ
A BC DE F
J
I
H
G
電気的特性（Ta=25℃）
Parameter
Collector to Emitter Breakdown voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E saturation voltage
Gain bandwidth product
Collector output capacitance
A～F running No.
G～J Month of manufacture
Symbol
Test conditions
V(BR)CEO
ICBO
IEBO
hFE*
hFE
VCE(sat)
fT
Cob
IC=-100μA, R BE=∞
V CB=-60V, I E=0mA
V EB=-6V, I C=0mA
V CE=-6V, I C=-1mA
V CE=-6V, I C=-100μA
IC=-100mA, I B=-10mA
V CE=-6V, I E=10mA
V CB=-6V, I E=0A, f=1MHz
Limits
Min Min Min
-50 -
-
- - -0.1
- - -0.1
150 - 500
90 -
-
- - -0.3
- 200 -
- 3.0 -
Unit
V
μA
μA
-
-
V
MHz
pF
※ It shows hFE classification in below table
Item E
F
hFE 150～300 250～500
ISAHAYA ELECTRONICS CORPORATION
1 page | ||
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