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Datasheet IRLZ14 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IRLZ14 | Power MOSFET, Transistor PD - 9.903A
IRLZ14S/L
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Surface Mount (IRLZ14S) Low-profile through-hole (IRLZ14L) 175°C Operating Temperature Fast Switching
D
VDSS = 60V RDS(on) = 0.20Ω
G S
ID = 10A
Description
Third Generation HEXFETs from International Rectifie |  International Rectifier | mosfet |
| 2 | IRLZ14 | Power MOSFET, Transistor IRLZ14, SiHLZ14
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5.0 V 8.4 3.5 6.0 Single
D
FEATURES
60 0.20
• Dynamic dV/dt Rating • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating |  Vishay Siliconix | mosfet |
| 3 | IRLZ14L | Power MOSFET, Transistor www.DataSheet.co.kr
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5 V 8.4 3.5 6.0 Single
D
FEATURES
60 0.20
• Halogen-free According to IEC 61249-2-21 Definition • Advanced Process | Vishay Siliconix | mosfet |
| 4 | IRLZ14S | Power MOSFET, Transistor www.DataSheet.co.kr
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5 V 8.4 3.5 6.0 Single
D
FEATURES
60 0.20
• Halogen-free According to IEC 61249-2-21 Definition • Advanced Process | Vishay Siliconix | mosfet |
IRL Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IRL1004 | HEXFET Power MOSFET
PD - 91702B
IRL1004
HEXFET® Power MOSFET
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l l
D
VDSS = 40V RDS(on) = 0.0065Ω
G
ID = 130A International Rectifier mosfet | | |
| 2 | IRL1004L | HEXFET Power MOSFET
PD - 91644A
IRL1004S IRL1004L
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l l
HEXFET® Power MOSFET
D
VDSS = 40V
G S
RDS(on) = 0.0065� International Rectifier mosfet | | |
| 3 | IRL1004LPBF | (IRL1004SPBF / IRL1004LPBF) HEXFET Power MOSFET
PD - 95575
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
IRL1004SPbF IRL1004LPbF
HEXFET® Power MOSFET
D
VDSS = 40V
G S
R International Rectifier mosfet | | |
| 4 | IRL1004PBF | Power MOSFET, Transistor l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free
Description
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing tec International Rectifier mosfet | | |
| 5 | IRL1004S | HEXFET Power MOSFET
PD - 91644A
IRL1004S IRL1004L
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l l
HEXFET® Power MOSFET
D
VDSS = 40V
G S
RDS(on) = 0.0065� International Rectifier mosfet | | |
| 6 | IRL1004SPBF | (IRL1004SPBF / IRL1004LPBF) HEXFET Power MOSFET
PD - 95575
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
IRL1004SPbF IRL1004LPbF
HEXFET® Power MOSFET
D
VDSS = 40V
G S
R International Rectifier mosfet | | |
| 7 | IRL1104 | HEXFET Power MOSFET
PD -91805
IRL1104
HEXFET® Power MOSFET
Logic-Level Gate Drive q Advanced Process Technology q Ultra Low On-Resistance q Dynamic dv/dt Rating q 175°C Operating Temperature q Fast Switching q Fully Avalanche Rated Description
q
D
VDSS = 40V
G S
RDS(on) = 0.008Ω ID = 104A
International Rectifier mosfet | |
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