DataSheet.es    


Datasheet 3DD13007 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
13DD13007NPN Plastic Encapsulated Transistor

Elektronische Bauelemente 3DD13007 8A , 700V NPN Plastic-Encapsulated Transistor FEATURES Power switching applications RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-220J CLASSIFICATION OF tS Product-Rank 3DD13007-A Range 3-4(µs) 3DD13007-B 4-5(µs) 3DD13007-C
SeCoS
SeCoS
transistor
23DD13007TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13007 TRANSISTOR£¨NPN £© TO¡ª 220 FEATURES Power dissipation PCM : 2 W£¨ Tamb=25¡æ£© Collector current ICM: 8 A Collector-base voltage V(BR)CBO : 700 V Operating and storag
Jiangsu Changjiang Electronics
Jiangsu Changjiang Electronics
transistor
33DD13007Plastic-Encapsulated Transistors

Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 3DD13007 FEATURES Power dissipation PCM: 2 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3. EMITTER TRANSISTOR (NPN) TO-220 aSheet4U.com Collector current 8 A ICM: Collector-base voltage 700 V V(BR)CBO: Operating and storage junctio
TRANSYS Electronics
TRANSYS Electronics
transistor
43DD13007TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13007 TRANSISTOR£¨NPN £© TO¡ª 220 FEATURES Power dissipation PCM : 2 W£¨ Tamb=25¡æ£© Collector current ICM: 8 A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperatu
JGD
JGD
transistor
53DD13007TRANSISTOR

DIP SMDType Type SMD Type Transistor IC Transistors Transistor Product specification 3DD13007 ■ Features ● High Speed Switching +0.1 1.27-0.1 TO-263 +0.1 1.27-0.1 +0.2 4.57-0.2 Unit: mm ● Suitable for Switching Regulator and Motor Control +0.2 8.7-0.2 +0.1 1.27-0.1 0.1max 2 3 +0.1 0.81
TY Semiconductor
TY Semiconductor
transistor


3DD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
13DD10NPN Silicon Low Frequency High Power Transistor

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD10, 3DD11 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent th
Shaanxi Qunli Electric
Shaanxi Qunli Electric
transistor
23DD100NPN Silicon Low Frequency High Power Transistor

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD100, 3DD101, 3DD102 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.
Shaanxi Qunli Electric
Shaanxi Qunli Electric
transistor
33DD101NPN Silicon Low Frequency High Power Transistor

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD100, 3DD101, 3DD102 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.
Shaanxi Qunli Electric
Shaanxi Qunli Electric
transistor
43DD101(3DD101 / 3DD102) NPN

Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com
ETC
ETC
data
53DD101ASilicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD101A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A APPLICATIONS ·Desi
Inchange Semiconductor
Inchange Semiconductor
transistor
63DD101ADiscrete semiconductor devices power transistor

Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com
SJ
SJ
transistor
73DD101A(3DD101 / 3DD102) NPN

Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com
ETC
ETC
data



Esta página es del resultado de búsqueda del 3DD13007. Si pulsa el resultado de búsqueda de 3DD13007 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap