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Datasheet LT120 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | LT120 | Hall Voltage 160mV GaAs Hall Device Hall Device
LT120A
LT120A
s Features ¡Small temperature coefficient of the Hall voltage ¡Good linearity of the Hall voltage ¡Small imbalanced voltage ¡Directly DC voltage applicable s Applications ¡Brushless motors VCR, CD, CD-ROM, FDD ¡Measuring equipment Gauss meters, magnetic substance de |  Sharp Electrionic Components | data |
| 2 | LT1201 | Op Amps UO UO
U
FEATURES
s 1mA Supply Current per Amplifier s 50V/µs Slew Rate s 12MHz Gain-Bandwidth s Unity-Gain Stable s 330ns Settling Time to 0.1%, 10V Step s 6V/mV DC Gain, RL = 2kΩ s 2mV Maximum Input Offset Voltage s 100nA Maximum Input Offset Current s 1µA Maximum Input Bias Current s ±12V Mi |  Linear Technology | data |
| 3 | LT1201-7 | 500 Watt AC-DC Converters T Series
500 Watt AC-DC Converters
Universal input range 70...255V AC with PFC Single outputs up to 56.5 V DC 4 kV AC I/O electric strength test voltage
LGA
• Rugged electrical and mechanical design, hot swappable • Battery chargers for 24 and 48 V lead acid batteries with remote temperature c |  Power-One | converter |
| 4 | LT1202 | Op Amps UO UO
U
FEATURES
s 1mA Supply Current per Amplifier s 50V/µs Slew Rate s 12MHz Gain-Bandwidth s Unity-Gain Stable s 330ns Settling Time to 0.1%, 10V Step s 6V/mV DC Gain, RL = 2kΩ s 2mV Maximum Input Offset Voltage s 100nA Maximum Input Offset Current s 1µA Maximum Input Bias Current s ±12V Mi | Linear Technology | data |
| 5 | LT1203 | 150MHz Video Multiplexers LT1203/LT1205 150MHz Video Multiplexers
FEATURES
s s s s s s s s s s s s s
DESCRIPTIO
– 3dB Bandwidth: 150MHz 0.1dB Gain Flatness: 30MHz Channel-to-Channel Switching Time: 25ns Turn-On/Turn-Off Time: 25ns High Slew Rate: 300V/µs Disabled Output Impedance: 10MΩ 50mV Switching Transient Channel | Linear Technology | multiplexer |
LT1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | LT100-S | Current Sensor Датчик тока LT 100-S/SP30
Для электронного преобразования токов: постоянного, переменного, импульсного и т.д. в пропорциональный выходной ток с гальванической развязкой  LEM sensor | | |
| 2 | LT1000-1.5W | Unmounted Laser Diode Chips
LT1000-1.5W Power Series
TM
Unmounted Laser Diode Chips 1.5 Watts CW 808, 830 and 915 nm
LT1000-1.5W Features State-of-the-art MBE technology ̈ Enhanced optical output power ̈ TE or TM polarization ̈ Long diode lifetime ̈ High reliability
̈
LT1000-1.5W Applications Graph  ETC diode | | |
| 3 | LT1000-15W | Unmounted Laser Diode Chips
LT1000-1.5W Power Series
TM
Unmounted Laser Diode Chips 1.5 Watts CW 808, 830 and 915 nm
LT1000-1.5W Features State-of-the-art MBE technology ̈ Enhanced optical output power ̈ TE or TM polarization ̈ Long diode lifetime ̈ High reliability
̈
LT1000-1.5W Applications Graph ETC diode | | |
| 4 | LT1000-SI | Current Transducer Current Transducer LT 1000-SI
For the electronic measurement of currents : DC, AC, pulsed..., with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit).
IPN
=
1000 A
Electrical data
IPN IP RM Primary nominal r.m.s. current Primary current, ETC data | | |
| 5 | LT10000-S | Current Transducer LT 10000-S LEM data | | |
| 6 | LT1001 | Precision Operational Amplifier U U
FEATURES
s Guaranteed Low Offset Voltage
LT1001AM
15µV max
LT1001C
60µV max
s Guaranteed Low Drift
LT1001AM 0.6µV/°C max
LT1001C 1.0µV/°C max
s Guaranteed Low Bias Current
LT1001AM
2nA max
LT1001C
4nA max
s Guaranteed CMRR
LT1001AM
114dB min
LT1001C
110dB min
s Guarante Linear Technology amplifier | | |
| 7 | LT1001A | NPN SILICON HIGH FREQUENCY TRANSISTOR LT1001A
NPN SILICON HIGH FREQUENCY TRANSISTOR
PACKAGE STYLE TO-39
B ØA 45° C
DESCRIPTION:
E
ØD
The ASILT1001A is a High Frequency Transistor Designed for High Gain Low Noise CATV, and MATV Amplifier Applications.
F
G
H
MAXIMUM RATINGS
IC VCE PDISS TJ TSTG θJC 200 mA 20 V 2.5 W @ TC = 50  Advanced Semiconductor transistor | |
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