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Datasheet IRF6218 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | IRF6218 | SMPS MOSFET
PD - 95862
SMPS MOSFET
Applications Reset Switch for Active Clamp Reset DC-DC converters
IRF6218
HEXFET® Power MOSFET
l
-150V 150m:@VGS = -10V
VDSS
RDS(on) max
ID
-27A
Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Includi | International Rectifier | mosfet |
2 | IRF6218L | Power MOSFET, Transistor Applications l Reset Switch for Active Clamp
Reset DC-DC converters
SMPS MOSFET
PD - 95863
IRF6218S
IRF6218L
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
:-150V 150m @VGS = -10V -27A
Benefits l Low Gate to Drain Charge to Reduce
Switching Losses l Fully Characterized Capacitance Including
Effect | International Rectifier | mosfet |
3 | IRF6218PBF | HEXFET Power MOSFET
PD -95441
SMPS MOSFET
Applications Reset Switch for Active Clamp Reset DC-DC converters l Lead-Free
l
IRF6218PbF
HEXFET® Power MOSFET
-150V 150m:@VGS = -10V
VDSS
RDS(on) max
ID
-27A
Benefits
l l
D
l
Low Gate to Drain Charge to Reduce Switching Losses Fully Characteriz | International Rectifier | mosfet |
4 | IRF6218S | Power MOSFET, Transistor Applications l Reset Switch for Active Clamp
Reset DC-DC converters
SMPS MOSFET
PD - 95863
IRF6218S
IRF6218L
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
:-150V 150m @VGS = -10V -27A
Benefits l Low Gate to Drain Charge to Reduce
Switching Losses l Fully Characterized Capacitance Including
Effect | International Rectifier | mosfet |
5 | IRF6218SPbF | Power MOSFET, Transistor SMPS MOSFET
Applications Reset Switch for Active Clamp Reset DC-DC converters
VDSS - 150V
IRF6218SPbF
HEXFET® Power MOSFET
RDS(on) (max) 150m@ VGS = -10V
ID -27A
Benefits
Low Gate to Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Eff | Infineon | mosfet |
IRF Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | IRF-182xx | Inductors w w ELECTRICAL SPECIFICATIONS
MATERIAL SPECIFICATIONS
Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite.
a D . w
ta
Sh
t e e
4U
.c
om
Inductors
Epoxy Conformal Coated Uniform Roll Coated
FEATURES
IRF
Vishay Dale
• Flame-retardant coating and color band identification. Vishay Intertechnology inductor | | |
2 | IRF-46 | Inductors Epoxy Conformal Coated
IRF-46
Vishay Dale
Inductors
Epoxy Conformal Coated, Axial Leaded
FEATURES
• Axial lead type, small lightweight design • Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS • Treated with epoxy resin coating for humidity COMPLIANT resi Vishay Siliconix inductor | | |
3 | IRF034 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF034
DESCRIPTION ·Drain Current ID=25A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.05Ω(Max) ·Simple Drive Requirements
APPLICATIONS ·Switching power supp Inchange Semiconductor mosfet | | |
4 | IRF034 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) PD - 90585
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number IRF034
IRF034 60V, N-CHANNEL
BVDSS RDS(on) 60V 0.050Ω
ID 25Α
The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transi International Rectifier transistor | | |
5 | IRF044 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF044
DESCRIPTION ·Drain Current ID=44A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.028Ω(Max) ·Simple Drive Requirements
APPLICATIONS ·Switching power sup Inchange Semiconductor mosfet | | |
6 | IRF044 | N-CHANNEL POWER MOSFET IRF044
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
N–CHANNEL POWER MOSFET
VDSS ID(cont) RDS(on)
FEATURES
• HERMETICALLY SEALED TO–3 METAL PACKAGE
7.87 (0.310) 6.99 (0.275)
1
20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.07 Seme LAB mosfet | | |
7 | IRF044 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE
PD - 90584
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number IRF044 BVDSS 60V RDS(on) 0.028 Ω ID 44Α
IRF044 60V, N-CHANNEL
The HEXFET technology is the key to International Rectifier’s advanced line of International Rectifier transistor | |
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