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Datasheet HVU362 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HVU362 | Variable Capacitance Diode VCXO
ADE-208-348 (Z)
HVU362 Variable Capacitance Diode VCXO
Rev. 0 May. 1995 Features
• High capacitance ratio.(n=3.0min) • Good C-V linearity. • Ultra small Resin Package (URP) is suitable for surface mount design.
Outline
Cathode mark Mark 1 2 1. Cathode 2. Anode
Ordering |  Hitachi Semiconductor | diode |
| 2 | HVU362 | Variable Capacitance Diode
HVU362
Variable Capacitance Diode for VCO
REJ03G0217-0100Z Rev.1.00 Apr 16, 2004
Features
• High capacitance ratio. (n =3.0 min) • Good C-V linearity. • Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information
Type No. HVU362 Laser Mark |  Renesas Technology | diode |
HVU Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HVU131 | Silicon Epitaxial Planar Pin Diode for High Frequency Switching HVU131
Silicon Epitaxial Planar Pin Diode for High Frequency Switching
ADE-208-239E(Z) Rev 5 Feb. 2000 Features
• Low capacitance.(C=0.8pF max) • Low forward resistance. (rf=1.0 Ω max) • Ultra small R esin P ackage (URP) is suitable for surface mount design.
Ordering Information
Type No. H Hitachi Semiconductor diode | | |
| 2 | HVU132 | Silicon Epitaxial Planar Pin Diode for High Frequency Switching HVU132
Silicon Epitaxial Planar Pin Diode for High Frequency Switching
ADE-208-321B(Z) Rev. 2 Feb. 2000 Features
• Low capacitance.(C=0.5pF max) • Low forward resistance. (rf=2.0 Ω max) • Ultra small R esin P ackage (URP) is suitable for surface mount design.
Ordering Information
Type No. Hitachi Semiconductor diode | | |
| 3 | HVU133 | Silicon Epitaxial Planar Pin Diode for High Frequency Switching HVU133
Silicon Epitaxial Planar Pin Diode for High Frequency Switching
ADE-208-377B(Z) Rev 2 Feb. 2000 Features
• Low capacitance.(C1=1.0pF max) • Low forward resistance. (rf=0.7 Ω max) • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.
Hitachi Semiconductor diode | | |
| 4 | HVU145 | Silicon Epitaxial Planar Pin Diode
HVU145
Silicon Epitaxial Planar Pin Diode for Antenna Switching
REJ03G0437-0200 (Previous: ADE-208-1508A) Rev.2.00 Dec 07, 2004
Features
• • • • An optimal solution for antenna switching in mobile phones. Low capacitance. (C =0.45 pF max) Low forward resistance. (rf = 1 Hitachi Semiconductor diode | | |
| 5 | HVU17 | Variable Capacitance Diode HVU17
Variable Capacitance Diode for VCO
REJ03G0079-0400Z (Previous: ADE-208-021C) Rev.4.00 Sep.17.2003
Features
• Good linearity of C-V curve. • To be usable at low voltage. • High figure of merit. • Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Informatio Renesas Technology diode | | |
| 6 | HVU187 | Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator HVU187
Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator
ADE-208-054D(Z) Rev 4 Nov. 1998 Features
• Low forward resistance. (rf=5.5 Ω max) • Ultra small R esin P ackage (URP) is suitable for surface mount design.
Ordering Information
Type No. HVU187 Laser Mark D Package Code U Hitachi Semiconductor diode | | |
| 7 | HVU200 | Variable Capacitance Diode for Electronic Tuning HVU200A
Variable Capacitance Diode for Electronic Tuning
ADE-208-067D(Z) Rev 4 Jun. 1996 Features
• High capacitance ratio(n = 10min) and suitable for wide band tuner. • Ultra small Resin Package (URP) is suitable for surface mount design. • Low series resistance and good C-V linearity.
Orde Hitachi Semiconductor diode | |
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