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Datasheet 1N6533U Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N6533U | Rectifiers
2,000 V - 5,000 V Rectifiers
0.05 A - 0.25 A Forward Current 70 ns Recovery Time
SURFACE MOUNT HERMETICALLY SEALED
1N6529U 1N6531U 1N6533U
ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS
Part Number Working Reverse Voltage (Vrwm) 55°C(1) Volts 1N6529U 1N6531U 1N6533U Amps Aver |  VMI | rectifier |
1N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N60 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 3 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 4 | 1N60 | Zender Diodes American Microsemiconductor diode | | |
| 5 | 1N60 | Germanium Glass Diodes International Semiconductor diode | | |
| 6 | 1N60 | Germanium Glass Diodes Central Semiconductor diode | | |
| 7 | 1N60 | Schottky Barrier Diode FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25 Parameter Repetitive peak reverse voltage Peak f  Formosa MS diode | | |
| 8 | 1N60 | N-CHANNEL MOSFET UNISONIC TECHNOLOGIES CO., LTD 1N60
1.2 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This powe  Unisonic Technologies mosfet | | |
| 9 | 1N60 | SMALL SIGNAL SCHOTTKY DIODE BL
FEATURES
GALAXY ELECTRICAL
VOLTAGE RANGE: 40 V CURRENT: 0.03 A
1N 6 0
SMALL SIGNAL SCHOTTKY DIODE
Metal s illicon junction m ajority carrier conduction High current capability,low forward voltage drop Extrem ely low revers e current IR Ultra s peed s witching characteris tics Sm all tem perat  BL diode | |
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