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Datasheet NE72218-T2 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1NE72218-T2C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET

DATA SHEET GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz • Gate length • Gate width • 4-pin super minimold package • Tape & reel packaging only available : Lg = 0.8 µm : Wg = 400
NEC
NEC		amplifier


NE7 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1NE71-0.2GSM Repeater

Sichuan Institute of Piezoelectric and Acoustooptic Technology l For GSM Repeater Absolute Maximum Rating Rating CW RF power Dissipation DC Voltage between any 2 pins Operating Temperature Value +13dBm ¡À 30VDC -10 to +60¡æ NE 71-0.2 71MHz SAW Filter Electrical Characteri
SIPAT
SIPAT		data
2NE713L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm ORDERING INFORMATION PART NUMBER NE71300-N NE71
NEC
NEC		amplifier
3NE71300LOW NOISE L TO K-BAND GaAs MESFET

LOW NOISE L TO K-BAND GaAs MESFET FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • HIGH ASSOCIATED GAIN GA = 9.5 dB TYP at f = 12 GHz • LG = 0.3 µm, WG = 280 µm • EPITAXIAL TECHNOLOGY • LOW PHASE NOISE 3 NE71300 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 1
NEC
NEC		data
4NE71300-LL to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm ORDERING INFORMATION PART NUMBER NE71300-N NE71
NEC
NEC		amplifier
5NE71300-ML to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm ORDERING INFORMATION PART NUMBER NE71300-N NE71
NEC
NEC		amplifier
6NE71300-NL to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm ORDERING INFORMATION PART NUMBER NE71300-N NE71
NEC
NEC		amplifier
7NE71383BL to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm ORDERING INFORMATION PART NUMBER NE71300-N NE71
NEC
NEC		amplifier



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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