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Datasheet MJD31 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MJD31 | General Purpose Amplifier Low Speed Switching Applications MJD31/31C
MJD31/31C
General Purpose Amplifier Low Speed Switching Applications
• Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP31 and TIP31C
1
D-PAK 1.Base
1
I-PAK 3.Emitter
2.Collector
NPN Epitaxial S |  Fairchild | amplifier |
| 2 | MJD31 | SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJD31/D
Complementary Power Transistors
• • • •
MJD31,C* PNP MJD32,C*
*Motorola Preferred Device
NPN
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications. Lead Formed |  Motorola Semiconductors | transistor |
| 3 | MJD31 | (MJD31 / MJD32) Complementary Power Transistors MJD31 (NPN), MJD32 (PNP)
Complementary Power Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications.
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” |  ON Semiconductor | transistor |
| 4 | MJD31-1 | SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJD31/D
Complementary Power Transistors
• • • •
MJD31,C* PNP MJD32,C*
*Motorola Preferred Device
NPN
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications. Lead Formed | Motorola Semiconductors | transistor |
| 5 | MJD31B | COMPLEMENTARY SILICON POWER TRANSISTORS ®
MJD31B/31C MJD32B/32C
COMPLEMENTARY SILICON POWER TRANSISTORS
s
s
s
STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) ELECTRICALLY SIMILAR TO TIP31B/C AND TIP32B/C
3 1
APPLICATIONS s GENERAL PURPOSE SWITCHING AND AMPLIFIER |  ST Microelectronics | transistor |
MJD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MJD112 | Silicon NPN transistor MJD112
Rev.E May.-2016
DATA SHEET
描述 / Descriptions TO-252 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-252 Plastic Package.
特征 / Features
直流电流增益高，E 与 C 间内置阻尼二极管电性能与 TIP112 等同。 High DC current gain, built-in a damp  BLUE ROCKET ELECTRONICS transistor | | |
| 2 | MJD112 | Silicon NPN epitaxial planer Transistors MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
MJD112
Features
• Lead Free Finish/RoHS Compliant("P" Suffix designates RoHS Compliant. See ordering information)
• Case Material:Molded Plast  MCC transistor | | |
| 3 | MJD112 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
MJD112
DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·Built-in a damper diode at E-C ·100% avalanche tested ·Minimum Lot-to-Lot variations for  Inchange Semiconductor transistor | | |
| 4 | MJD112 | NPN Silicon Darlington Transistor MJD112 NPN Silicon Darlington Transistor
MJD112
NPN Silicon Darlington Transistor
Features
• High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix)
November 2006
tm
Equivalent Circuit C
B
1 D-PAK
1.Base 2.Collector 3.Emitter
R1 R2
 Fairchild Semiconductor transistor | | |
| 5 | MJD112 | COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS
MJD112 NPN MJD117 PNP
DPAK (TO-252) Plastic Package
Designed for General Purpose Power and Switching Applications
ABSOLUTE MAXIMUM RATINGS DESCRIPTION Coll  CDIL transistor | | |
| 6 | MJD112 | NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
MJD112
TRANSISTOR (NPN)
yFEATURES Complementary Darlington Power Transistors Dpak for Surface Mount Applications
TO-251-3L
1. BASE 2. COLLECTOR 3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise note  JCET transistor | | |
| 7 | MJD112 | Complementary Darlington Power Transistors MJD112 (NPN), MJD117 (PNP)
Complementary Darlington Power Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.
Features
• Lead Formed for Surf  ON transistor | |
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