Datasheet MJD2955 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	MJD2955	Silicon PNP Power Transistor isc Silicon PNP Power Transistor INCHANGE Semiconductor MJD2955 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.1 V(Max)@ IC = -4A ·Complement to Type MJD3055 ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device	Inchange Semiconductor	transistor
2	MJD2955	Complementary Power Transistors MJD2955 (PNP) MJD3055 (NPN) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • • •	ON	transistor
3	MJD2955	COMPLEMENTARY SILICON POWER TRANSISTORS MJD2955 ® MJD3055 COMPLEMENTARY POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") s ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T APPLICATIONS s GENERAL PURPOSE SWITCHING AND AMPLIFIER DESCRIPTION The MJD2955 an	ST Microelectronics	transistor
4	MJD2955	General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications MJD2955 MJD2955 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • • • • • Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “ -I “ Suffix) Electrically Similar to Popular MJE2955T DC Current Gain Specified to 1	Fairchild	amplifier
5	MJD2955	SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD2955/D Complementary Power Transistors • • • • • • MJD2955 PNP MJD3055 SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS NPN DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed	Motorola Semiconductors	transistor

MJD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	MJD112	Silicon NPN transistor MJD112 Rev.E May.-2016 DATA SHEET 描述 / Descriptions TO-252 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-252 Plastic Package. 特征 / Features 直流电流增益高，E 与 C 间内置阻尼二极管电性能与 TIP112 等同。 High DC current gain, built-in a damp	BLUE ROCKET ELECTRONICS	transistor
2	MJD112	Silicon NPN epitaxial planer Transistors MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MJD112 Features • Lead Free Finish/RoHS Compliant("P" Suffix designates RoHS Compliant. See ordering information) • Case Material:Molded Plast	MCC	transistor
3	MJD112	Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD112 DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·Built-in a damper diode at E-C ·100% avalanche tested ·Minimum Lot-to-Lot variations for	Inchange Semiconductor	transistor
4	MJD112	NPN Silicon Darlington Transistor MJD112 NPN Silicon Darlington Transistor MJD112 NPN Silicon Darlington Transistor Features • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) November 2006 tm Equivalent Circuit C B 1 D-PAK 1.Base 2.Collector 3.Emitter R1 R2	Fairchild Semiconductor	transistor
5	MJD112	COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD112 NPN MJD117 PNP DPAK (TO-252) Plastic Package Designed for General Purpose Power and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Coll	CDIL	transistor
6	MJD112	NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD112 TRANSISTOR (NPN) yFEATURES Complementary Darlington Power Transistors Dpak for Surface Mount Applications TO-251-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise note	JCET	transistor
7	MJD112	Complementary Darlington Power Transistors MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surf	ON	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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