Datasheet PTF210901 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	PTF210901	LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Two–Carrier WCDMA Drive–Up	Infineon Technologies AG	transistor
2	PTF210901E	LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Two–Carrier WCDMA Drive–Up	Infineon Technologies AG	transistor

PTF Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PTF	Metal Film Resistors www.vishay.com PTF Vishay Dale Metal Film Resistors, High Precision, High Stability FEATURES • Extremely low temperature coefficient of resistance • Very low noise and voltage coefficient • Very good high frequency characteristics • Can replace wirewound bobbins • Proprietary epoxy coat	Vishay
2	PTF080101	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ	Infineon Technologies AG
3	PTF080101S	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ	Infineon Technologies AG
4	PTF080451	LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • • B	Infineon Technologies AG
5	PTF080451E	LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • • B	Infineon Technologies AG
6	PTF080601	LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Typ	Infineon Technologies AG
7	PTF080601A	LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Typ	Infineon Technologies AG

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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