Datasheet IRF1404 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	IRF1404	N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF1404 FEATURES ·Drain Current –ID= 162A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.004Ω(Max) ·Fast Switching Description Seventh Generation HEXFET ® P	Inchange Semiconductor	mosfet
2	IRF1404	Power MOSFET, Transistor l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Automotive Qualified (Q101) Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniqu	International Rectifier	mosfet
3	IRF1404L	Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A) PD -93853C HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description ® l l IRF1404S IRF1404L D VDSS = 40V G S RDS(on) = 0.004Ω ID = 162A Seventh Generation HEXFET Pow	International Rectifier	mosfet
4	IRF1404LPbF	Power MOSFET, Transistor l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr	International Rectifier	mosfet
5	IRF1404PbF	HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ext	International Rectifier	mosfet

IRF Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	IRF-182xx	Inductors w w ELECTRICAL SPECIFICATIONS MATERIAL SPECIFICATIONS Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite. a D . w ta Sh t e e 4U .c om Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES IRF Vishay Dale • Flame-retardant coating and color band identification.	Vishay Intertechnology	inductor
2	IRF-46	Inductors Epoxy Conformal Coated IRF-46 Vishay Dale Inductors Epoxy Conformal Coated, Axial Leaded FEATURES • Axial lead type, small lightweight design • Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS • Treated with epoxy resin coating for humidity COMPLIANT resi	Vishay Siliconix	inductor
3	IRF034	N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF034 DESCRIPTION ·Drain Current ID=25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max) ·Simple Drive Requirements APPLICATIONS ·Switching power supp	Inchange Semiconductor	mosfet
4	IRF034	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) PD - 90585 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF034   IRF034 60V, N-CHANNEL BVDSS RDS(on) 60V 0.050Ω ID 25Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transi	International Rectifier	transistor
5	IRF044	N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF044 DESCRIPTION ·Drain Current ID=44A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.028Ω(Max) ·Simple Drive Requirements APPLICATIONS ·Switching power sup	Inchange Semiconductor	mosfet
6	IRF044	N-CHANNEL POWER MOSFET IRF044 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • HERMETICALLY SEALED TO–3 METAL PACKAGE 7.87 (0.310) 6.99 (0.275) 1 20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.07	Seme LAB	mosfet
7	IRF044	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE PD - 90584 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF044 BVDSS 60V RDS(on) 0.028 Ω ID 44Α  IRF044 60V, N-CHANNEL The HEXFET technology is the key to International Rectifier’s advanced line of	International Rectifier	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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