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Datasheet T45 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | T45 | Thyristor - Triac |  Loras Industries Inc | triac |
| 2 | T458BPA | 17 - 24 GHz GaAs Power Amplifier / Driver MMIC T458B_PA 17 – 24 GHz GaAs Power Amplifier/Driver MMIC • • • • • •
4 Stage Monolithic Microwave Integrated Circuit (MMIC) Amplifier Input/Output matched (incl. bond wires) Frequency range: 17 GHz to 24 GHz High Isolation > 50 dB Gain > 22 dB P-1dB > 23 dBm, Psat > 24 dBm
chip size: 4.2 |  Infineon Technologies | amplifier |
| 3 | T45N1200 | IXGT45N1200
IGBT
High Voltage, Low VCE(sat)
Preliminary data sheet
IXGH 45N120 VCES IXGT 45N120 IC25 VCE(sat) tfi(typ)
= 1200 V = 75 A = 2.5 V = 390 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 |  IXYS Corporation | data |
T45 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | T45 | Thyristor - Triac Loras Industries Inc triac | | |
| 2 | T458BPA | 17 - 24 GHz GaAs Power Amplifier / Driver MMIC T458B_PA 17 – 24 GHz GaAs Power Amplifier/Driver MMIC • • • • • •
4 Stage Monolithic Microwave Integrated Circuit (MMIC) Amplifier Input/Output matched (incl. bond wires) Frequency range: 17 GHz to 24 GHz High Isolation > 50 dB Gain > 22 dB P-1dB > 23 dBm, Psat > 24 dBm
chip size: 4.2 Infineon Technologies amplifier | | |
| 3 | T45N1200 | IXGT45N1200
IGBT
High Voltage, Low VCE(sat)
Preliminary data sheet
IXGH 45N120 VCES IXGT 45N120 IC25 VCE(sat) tfi(typ)
= 1200 V = 75 A = 2.5 V = 390 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 IXYS Corporation data | |
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