Datasheet 2SJ48 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	2SJ48	LOW FREQUENCY POWER AMPLIFIER This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer	Hitachi Semiconductor	amplifier
2	2SJ483	Silicon P Channel MOS FET High Speed Power Switching 2SJ483 Silicon P Channel MOS FET High Speed Power Switching ADE-208-519 1st. Edition Features • Low on-resistance R DS(on) = 0.08Ω typ (at VGS = –10 V, I D = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A Outline TO-92MOD. D G 3 S 2 1 1. Source 2. Drain	Hitachi Semiconductor	data
3	2SJ484	Silicon P-Channel MOS FET High Speed Power Switching 2SJ484 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-501 A 2nd. Edition Features • Low on-resistance R DS(on) = 0.18 Ω typ. (at V GS = –10V, ID = –1A) • Low drive current • High speed switching • 4V gate drive devices. Outline UPAK 2 3 1 4 D G 1. Gate 2. Drain 3. S	Hitachi Semiconductor	data
4	2SJ485	Ultrahigh-Speed Switching Applications Ordering number:ENN6434 P-Channel Silicon MOSFET 2SJ485 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2083B [2SJ485] 6.5 5.0 4 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 1 2 3 7.5 0.5 2.3	Sanyo Semicon Device	data
5	2SJ486	Silicon P Channel MOS FET Low FrequencyPower Switching 2SJ486 Silicon P Channel MOS FET Low FrequencyPower Switching ADE-208-512 A 2nd. Edition Features • Low on-resistance R DS(on) = 0.5 Ω typ. (at V GS = –4V, ID = –100 mA) • 2.5V gate drive devices. • Small package (MPAK). Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SJ486 A	Hitachi Semiconductor	data

2SJ Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	2SJ0536	Silicon P-Channel MOS FET Silicon MOS FETs (Small Signal) 2SJ0536 Silicon P-Channel MOS FET Secondary battery pack (Li ion battery, etc.) For switching 2.1±0.1 0.425 1.25±0.1 0.425 unit: mm q High-speed switching q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine pac	Panasonic Semiconductor	data
2	2SJ103	P CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER / ANALOG SWITCH/ CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS) 2SJ103 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ103 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · · · · High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low RDS (ON): RDS (ON) = 270	Toshiba Semiconductor	amplifier
3	2SJ104	Silicon P Channel Junction Type Field Effect Transistor TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ104 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ104 Unit: mm · High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) · Low RDS (ON) = 40 Ω (typ.) (IDSS = −5 mA) · Complimenta	Toshiba Semiconductor	transistor
4	2SJ105	Silicon P Channel Junction Type Field Effect Transistor TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ105 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ105 Unit: mm · High breakdown voltage: VGDS = 50 V · High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) · Low RDS (ON): RDS (ON	Toshiba Semiconductor	transistor
5	2SJ106	Silicon P Channel Junction Type Field Effect Transistor 2SJ106 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ106 Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications Unit: mm • High breakdown voltage: VGDS = 50 V • High input impedance: IGSS = 1.0 nA	Toshiba Semiconductor	transistor
6	2SJ107	Silicon P Channel Junction Type Field Effect Transistor TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ107 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ107 Unit: mm • High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) • Low RDS (ON): RDS (ON) = 40 Ω (typ.) • Small package �	Toshiba Semiconductor	transistor
7	2SJ108	Silicon P Channel Junction Type Field Effect Transistor TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 2SJ108 Low Noise Audio Amplifier Applications Unit: mm · Recommended for first stages of EQ amplifiers and MC head amplifiers. · High \|Yfs\|: \|Yfs\| = 22 mS (typ.) (VDS = −10 V, VGS = 0, IDSS = −3 mA) · Low noise: En = 0	Toshiba Semiconductor	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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