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Datasheet 2SD667 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SD667 | Silicon NPN Epitaxial 2SD667, 2SD667A
Silicon NPN Epitaxial
Application
• Low frequency power amplifier • Complementary pair with 2SB647/A
Outline
TO-92MOD
1. Emitter 2. Collector 3. Base 3 2 1
2SD667, 2SD667A
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitte |  Hitachi Semiconductor | transistor |
| 2 | 2SD667 | NPN Transistor
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SD667,2SD667A
TO-92MOD
1. EMITTER 2. COLLECTOR 3. BASE
TRANSISTOR (NPN)
FEATURES z Low frequency power amplifier z Complementary pair with 2SB647/A MAXIMUM RATINGS (TA=25℃ unless ot |  Jiangsu Changjiang Electronics | transistor |
| 3 | 2SD667 | Silicon NPN Epitaxial 2SD667, 2SD667A
Silicon NPN Epitaxial
Application
• Low frequency power amplifier • Complementary pair with 2SB647/A
Outline
RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod)
REJ03G0769-0200 (Previous ADE-208-1137)
Rev.2.00 Aug.10.2005
1. Emitter 2. Collector 3. Base
3 2 1
Absolute |  Renesas | transistor |
| 4 | 2SD667 | NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
2SD667
NPN SILICON TRANSISTOR
SILICON NPN EPITAXIAL
DESCRIPTION
The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier.
FEATURES
* Low frequency power amplifier
ORDERING INFORMATION
Ordering Number
|  Unisonic Technologies | transistor |
| 5 | 2SD667A | NPN Plastic Encapsulated Transistor Elektronische Bauelemente
2SD667A
1A , 120V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Low Frequency Power Amplifier Complementary Pair with 2SB647A
CLASSIFICATION OF hFE (1)
Product-Rank
2SD667A-B
Range
60~1 |  SeCoS | transistor |
2SD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SD0592A | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0592A (2SD592A)
Silicon NPN epitaxial planar type
For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features
0.7±0.2
Unit: mm
5.0±0.2 4.0±0.2
• Large collector power dissipation PC • Low collector-emitter saturation voltage V  Panasonic Semiconductor transistor | | |
| 2 | 2SD0601 | Silicon NPN epitaxial planer type Transistor
2SD601A
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB709A
2.8 –0.3
+0.2
Unit: mm
s Features
q q q
0.65±0.15
+0.25 1.5 –0.05
0.65±0.15
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type pac Panasonic Semiconductor transistor | | |
| 3 | 2SD0601A | Silicon NPN epitaxial planer type Transistor Transistor
2SD0601A (2SD601A)
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB0709A (2SB709A)
I Features
G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of the equipment and
a Panasonic Semiconductor transistor | | |
| 4 | 2SD0602 | Silicon NPN epitaxial planer type Transistors
2SD0602A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB0710A I Features
• Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t Panasonic Semiconductor transistor | | |
| 5 | 2SD0602A | Silicon NPN epitaxial planer type Transistors
2SD0602A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB0710A I Features
• Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t Panasonic Semiconductor transistor | | |
| 6 | 2SD0638 | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0638 (2SD638)
Silicon NPN epitaxial planar type
For medium-power general amplification Complementary to 2SB0643 (2SB643)
(0.4)
(1.5) (1.5)
Unit: mm
6.9±0.1 2.5±0.1 (1.0)
2.0±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitt Panasonic Semiconductor transistor | | |
| 7 | 2SD0662 | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0662, 2SD0662B (2SD662, 2SD662B)
Silicon NPN epitaxial planar type
For high breakdown voltage general amplification
6.9±0.1 2.5±0.1 (1.0)
Unit: mm
(0.4)
(1.5)
2.0±0.2
• High collector-emitter voltage (Base open) VCEO • High transition frequency fT • Panasonic Semiconductor transistor | |
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